Issued Patents All Time
Showing 1–25 of 69 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12323134 | Semiconductor switching module with insulated gate bipolar transistor and unipolar switching device | Frank Pfirsch, Jana Hänsel, Katja Waschneck | 2025-06-03 |
| 12255251 | Semiconductor device including first gate electrode and second gate electrode | — | 2025-03-18 |
| 12249551 | Power semiconductor device | Moritz Hauf, Hans-Joachim Schulze, Holger Schulze, Benedikt Stoib | 2025-03-11 |
| 12199146 | Power semiconductor device with dV/dt controllability and low gate charge | Alexander Philippou, Christian Jaeger, Johannes Georg Laven, Helmut Maeckel | 2025-01-14 |
| 11848354 | Diode structure of a power semiconductor device | Philip Christoph Brandt, Johannes Georg Laven | 2023-12-19 |
| 11742417 | Power semiconductor device including first and second trench structures | Thorsten Arnold, Ilaria Imperiale, Alexander Philippou, Hans-Juergen Thees | 2023-08-29 |
| 11728417 | Semiconductor device including first gate electrode and second gate electrode | — | 2023-08-15 |
| 11721689 | Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region | Johannes Georg Laven, Thomas Basler, Philip Christoph Brandt, Maria Cotorogea | 2023-08-08 |
| 11682700 | Power semiconductor device with dV/dt controllability and low gate charge | Alexander Philippou, Christian Jaeger, Johannes Georg Laven, Helmut Maeckel | 2023-06-20 |
| 11538906 | Diode with structured barrier region | Johannes Georg Laven, Alexander Philippou, Christian Philipp Sandow | 2022-12-27 |
| 11437471 | Power semiconductor device | Moritz Hauf, Hans-Joachim Schulze, Holger Schulze, Benedikt Stoib | 2022-09-06 |
| 11410989 | Semiconductor device having overload current carrying capability | Johannes Georg Laven, Thomas Basler, Philip Christoph Brandt, Maria Cotorogea | 2022-08-09 |
| 11398472 | RC IGBT with an IGBT section and a diode section | Johannes Georg Laven, Frank Pfirsch, Alexander Philippou, Christian Philipp Sandow | 2022-07-26 |
| 11264459 | Power semiconductor device | Moriz Jelinek, Franz-Josef Niedernostheide, Frank Pfirsch, Christian Philipp Sandow, Hans-Joachim Schulze | 2022-03-01 |
| 11257914 | Semiconductor die, semiconductor device and IGBT module | Vera van Treek, Christian Jaeger, Christian Mueller, Franz-Josef Niedernostheide, Frank Pfirsch +2 more | 2022-02-22 |
| 11133380 | Diode structure of a power semiconductor device | Philip Christoph Brandt, Johannes Georg Laven | 2021-09-28 |
| 10978560 | Power semiconductor device with dV/dt controllability and low gate charge | Alexander Philippou, Christian Jaeger, Johannes Georg Laven, Helmut Maeckel | 2021-04-13 |
| 10903344 | Semiconductor device with separation regions | Matteo Dainese, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2021-01-26 |
| 10886909 | Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device | Johannes Georg Laven, Thomas Basler | 2021-01-05 |
| 10825906 | Semiconductor device with transistor cells and enhancement cells with delayed control signals | Johannes Georg Laven, Matteo Dainese, Christian Jaeger | 2020-11-03 |
| 10651165 | Semiconductor device having overload current carrying capability | Johannes Georg Laven, Thomas Basler, Philip Christoph Brandt, Maria Cotorogea | 2020-05-12 |
| 10546939 | N-channel bipolar power semiconductor device with P-layer in the drift volume | Markus Bina, Hans-Joachim Schulze, Oana Julia Spulber | 2020-01-28 |
| 10483384 | Transistor device with high current robustness | Riteshkumar Bhojani, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Josef Lutz | 2019-11-19 |
| 10475910 | Semiconductor device having an insulated gate bipolar transistor arrangement | Johannes Georg Laven, Hans-Joachim Schulze | 2019-11-12 |
| 10475909 | Electric assembly including a bipolar switching device and a wide bandgap transistor | Thomas Basler, Daniel Domes, Johannes Georg Laven, Roland Rupp | 2019-11-12 |