Issued Patents All Time
Showing 51–69 of 69 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9647100 | Semiconductor device with auxiliary structure including deep level dopants | Hans-Joachim Schulze, Christian Jaeger, Franz-Josef Niedernostheide, Andre Rainer Stegner, Antonio Vellei | 2017-05-09 |
| 9641168 | Controlling reverse conducting IGBT | Johannes Georg Laven, Heiko Rettinger | 2017-05-02 |
| 9613805 | Method for forming a semiconductor device | Werner Schustereder, Holger Schulze, Johannes Georg Laven, Rudolf Berger, Thomas Gutt | 2017-04-04 |
| 9570577 | Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas | Matteo Dainese, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2017-02-14 |
| 9553179 | Semiconductor device and insulated gate bipolar transistor with barrier structure | Antonio Vellei, Johannes Georg Laven, Alexander Philippou | 2017-01-24 |
| 9543389 | Semiconductor device with recombination region | Johannes Georg Laven, Peter Kanschat | 2017-01-10 |
| 9536999 | Semiconductor device with control structure including buried portions and method of manufacturing | Johannes Georg Laven, Hans-Joachim Schulze, Matteo Dainese, Peter Lechner | 2017-01-03 |
| 9515066 | Semiconductor device having an insulated gate bipolar transistor arrangement and a method for forming such a semiconductor device | Johannes Georg Laven, Hans-Joachim Schulze | 2016-12-06 |
| 9419080 | Semiconductor device with recombination region | Johannes Georg Laven, Hans-Joachim Schulze, Peter Irsigler, Holger Huesken | 2016-08-16 |
| 9373710 | Insulated gate bipolar transistor | Vera van Treek, Frank Pfirsch, Franz-Josef Niedernostheide | 2016-06-21 |
| 9245984 | Reverse blocking semiconductor device, semiconductor device with local emitter efficiency modification and method of manufacturing a reverse blocking semiconductor device | Johannes Georg Laven, Christian Jaeger, Hans-Joachim Schulze | 2016-01-26 |
| 9231091 | Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones | Matteo Dainese, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2016-01-05 |
| 9147727 | Semiconductor device and method for forming a semiconductor device | Johannes Georg Laven, Hans-Joachim Schulze | 2015-09-29 |
| 9105679 | Semiconductor device and insulated gate bipolar transistor with barrier regions | Johannes Georg Laven, Christian Jaeger | 2015-08-11 |
| 9093568 | Semiconductor diode | Hans-Joachim Schulze, Johannes Georg Laven | 2015-07-28 |
| 9082629 | Semiconductor device and method for forming a semiconductor device | Johannes Georg Laven, Hans-Joachim Schulze | 2015-07-14 |
| 9076838 | Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing | Johannes Georg Laven, Alexander Philippou, Hans-Joachim Schulze, Christian Jaeger, Antonio Vellei | 2015-07-07 |
| 9064923 | Bipolar semiconductor component with a fully depletable channel zone | Josef Lutz, Ralf Siemieniec, Hans-Joachim Schulze | 2015-06-23 |
| 8476712 | Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode | Josef Lutz, Ralf Siemieniec, Hans-Joachim Schulze | 2013-07-02 |