Issued Patents All Time
Showing 26–50 of 69 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10461739 | Transistor device | Thomas Basler, Johannes Georg Laven, Franz-Josef Niedernostheide, Hans-Joachim Schulze | 2019-10-29 |
| 10404250 | Transistor device | Thomas Basler, Johannes Georg Laven, Franz-Josef Niedernostheide, Hans-Joachim Schulze | 2019-09-03 |
| 10381467 | Semiconductor device with separation regions | Matteo Dainese, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2019-08-13 |
| 10340337 | Diode structure of a power semiconductor device | Johannes Georg Laven, Philip Christoph Brandt | 2019-07-02 |
| 10340264 | Semiconductor device comprising a clamping structure | Stephan Voss, Thomas Basler, Thomas Kimmer, Hans-Joachim Schulze | 2019-07-02 |
| 10333387 | Electric assembly including a semiconductor switching device and a clamping diode | Thomas Basler, Johannes Georg Laven | 2019-06-25 |
| 10332973 | N-channel bipolar power semiconductor device with p-layer in the drift volume | Markus Bina, Hans-Joachim Schulze, Oana Julia Spulber | 2019-06-25 |
| 10224206 | Bipolar transistor device with an emitter having two types of emitter regions | Christian Jaeger, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Antonio Vellei | 2019-03-05 |
| 10217837 | Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures | Matteo Dainese, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2019-02-26 |
| 10200028 | Electric assembly including a reverse conducting switching device and a rectifying device | Johannes Georg Laven, Thomas Basler | 2019-02-05 |
| 10153275 | Method of operating an IGBT having switchable and non-switchable diode cells | Johannes Georg Laven | 2018-12-11 |
| 9997602 | Semiconductor device with transistor cells and enhancement cells with delayed control signals | Johannes Georg Laven, Matteo Dainese, Christian Jaeger | 2018-06-12 |
| 9985017 | Semiconductor device comprising a clamping structure | Stephan Voss, Thomas Basler, Thomas Kimmer, Hans-Joachim Schulze | 2018-05-29 |
| 9978851 | n-channel bipolar power semiconductor device with p-layer in the drift volume | Markus Bina, Hans-Joachim Schulze, Oana Julia Spulber | 2018-05-22 |
| 9941274 | Semiconductor device with a switchable and a non-switchable diode region | Johannes Georg Laven | 2018-04-10 |
| 9923482 | System and method for a power inverter with controllable clamps | Johannes Georg Laven, Heiko Rettinger, Uwe Jansen, Thomas Basler | 2018-03-20 |
| 9917186 | Semiconductor device with control structure including buried portions and method of manufacturing | Johannes Georg Laven, Hans-Joachim Schulze, Matteo Dainese, Peter Lechner | 2018-03-13 |
| 9899504 | Power semiconductor transistor having increased bipolar amplification | Johannes Georg Laven, Hans-Joachim Schulze, Antonio Vellei | 2018-02-20 |
| 9899478 | Desaturable semiconductor device with transistor cells and auxiliary cells | Johannes Georg Laven | 2018-02-20 |
| 9876100 | Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones | Matteo Dainese, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2018-01-23 |
| 9837506 | Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures | Matteo Dainese, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2017-12-05 |
| 9741571 | Bipolar transistor device with an emitter having two types of emitter regions | Christian Jaeger, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Antonio Vellei | 2017-08-22 |
| 9679892 | Method of manufacturing a reverse blocking semiconductor device | Johannes Georg Laven, Christian Jaeger, Hans-Joachim Schulze | 2017-06-13 |
| 9666665 | Semiconductor device with semiconductor mesa including a constriction | Johannes Georg Laven, Matteo Dainese, Peter Lechner | 2017-05-30 |
| 9653568 | Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures | Johannes Georg Laven, Alexander Philippou, Hans-Joachim Schulze, Christian Jaeger, Antonio Vellei | 2017-05-16 |