Issued Patents All Time
Showing 1–25 of 118 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12119376 | Power semiconductor device having vertically parallel p-n layers formed in an active region under transistor cells and under a non-depletable extension zone formed in the edge region | Franz Hirler, Bjoern Fischer, Joachim Weyers | 2024-10-15 |
| 12002804 | Half-bridge circuit including integrated level shifter transistor | Franz Hirler, Peter Irsigler | 2024-06-04 |
| 11527608 | Method for producing a transistor device having a superjunction structure | Franz Hirler, Wolfgang Jantscher, Yann Ruet | 2022-12-13 |
| 11329126 | Method of manufacturing a superjunction semiconductor device | Armin Tilke, Hans Weber, Christian Fachmann, Roman Knoefler, Gabor Mezoesi +3 more | 2022-05-10 |
| 11309434 | Semiconductor device and method of producing the same | Ahmed Mahmoud, Rolf Weis | 2022-04-19 |
| 10971582 | Method for forming a superjunction transistor device | Franz Hirler, Wolfgang Jantscher, Yann Ruet | 2021-04-06 |
| 10950691 | Power converter circuit having a controller for generating a drive signal for driving an electronic switch with high avalanche robustness | Giulio Fragiacomo, Bjoern Fischer, Rene Mente | 2021-03-16 |
| 10833066 | Half-bridge circuit including a low-side transistor and a level shifter transistor integrated in a common semiconductor body | Franz Hirler, Peter Irsigler | 2020-11-10 |
| 10516065 | Semiconductor devices and methods for forming semiconductor devices | Anton Mauder, Frank Pfirsch, Hans-Joachim Schulze, Philipp Seng | 2019-12-24 |
| 10490656 | Charge-compensation semiconductor device and a manufacturing method therefor | Franz Hirler, Anton Mauder, Frank Pfirsch, Hans-Joachim Schulze, Uwe Wahl | 2019-11-26 |
| 10475880 | Transistor device with high avalanche robustness | Giulio Fragiacomo, Bjoern Fischer, Rene Mente | 2019-11-12 |
| RE47710 | Power semiconductor having a lightly doped drift and buffer layer | Markus Zundel, Franz Hirler | 2019-11-05 |
| 10468479 | VDMOS having a drift zone with a compensation structure | Franz Hirler, Bjoern Fischer, Joachim Weyers | 2019-11-05 |
| 10276655 | Semiconductor devices and methods for forming a semiconductor device | — | 2019-04-30 |
| 10128367 | Transistor device with increased gate-drain capacitance | Ahmed Mahmoud, Enrique Vecino Vazquez | 2018-11-13 |
| 10014367 | Semiconductor device including an edge construction with straight sections and corner sections | — | 2018-07-03 |
| 9972619 | Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices | Rolf Weis, Franz Hirler, Martin Feldtkeller, Gerald Deboy, Matthias Stecher | 2018-05-15 |
| 9947741 | Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area | Hans-Joachim Schulze, Franz-Josef Niedernostheide, Anton Mauder, Joachim Weyers, Franz Hirler +3 more | 2018-04-17 |
| 9899510 | Semiconductor device | Winfried Kaindl, Franz Hirler | 2018-02-20 |
| 9825127 | Super junction semiconductor device with field extension zones | Franz Hirler, Uwe Wahl | 2017-11-21 |
| 9722020 | Super junction semiconductor device having columnar super junction regions extending into a drift layer | Franz Hirler, Hans-Joachim Schulze, Uwe Wahl, Winfried Kaindl | 2017-08-01 |
| 9711621 | Trench transistor having a doped semiconductor region | Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Markus Schmitt +2 more | 2017-07-18 |
| 9679895 | Semiconductor device having switchable regions with different transconductances | Christian Fachmann, Enrique Vecino Vazquez | 2017-06-13 |
| 9627471 | Super junction semiconductor device having strip structures in a cell area | Franz Hirler, Hans Weber, Stefan Gamerith | 2017-04-18 |
| 9570607 | Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area | Hans-Joachim Schulze, Franz-Josef Niedernostheide, Anton Mauder, Joachim Weyers, Franz Hirler +3 more | 2017-02-14 |