Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11374125 | Vertical transistor device having a discharge region comprising at least one lower dose section and located at least partially below a gate electrode pad | Winfried Kaindl, Enrique Vecino Vazquez | 2022-06-28 |
| 11329126 | Method of manufacturing a superjunction semiconductor device | Armin Tilke, Hans Weber, Christian Fachmann, Roman Knoefler, Manfred Pippan +3 more | 2022-05-10 |
| 10957788 | Semiconductor devices with superjunction structures | Daniel Hölzl, Henning Kraack, Hans-Joachim Schulze, Waqas Mumtaz Syed | 2021-03-23 |
| 10923432 | Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark | Andreas Moser, Hans Weber, Johannes Baumgartl, Michael Treu | 2021-02-16 |
| 10811529 | Transistor device with gate resistor | Andreas Riegler, Christian Fachmann, Bjoern Fischer, Franz Hirler, Hans Weber | 2020-10-20 |
| 10658497 | Method for manufacturing semiconductor devices with superjunction structures | Daniel Hölzl, Henning Kraack, Hans-Joachim Schulze, Waqas Mumtaz Syed | 2020-05-19 |
| 10600740 | Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark | Andreas Moser, Hans Weber, Johannes Baumgartl, Michael Treu | 2020-03-24 |
| 10411126 | Semiconductor device having a first through contact structure in ohmic contact with the gate electrode | Andreas Riegler, Christian Fachmann, Hans Weber | 2019-09-10 |
| 10374032 | Field-effect semiconductor device having N and P-doped pillar regions | Hans Weber, Christian Fachmann, Andreas Riegler | 2019-08-06 |
| 10236258 | Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark | Andreas Moser, Hans Weber, Michael Treu, Johannes Baumgartl | 2019-03-19 |
| 10211300 | Method of forming a semiconductor device | Franz Hirler, Hans Weber | 2019-02-19 |
| 9711357 | Method of manufacturing a semiconductor device with epitaxial layers and an alignment structure | Hans Weber, Andreas Moser, Johannes Baumgartl | 2017-07-18 |