Issued Patents All Time
Showing 1–25 of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11923276 | Semiconductor device including a bidirectional switch | Ralf Otremba, Klaus Schiess | 2024-03-05 |
| 11605577 | Semiconductor device including a bidirectional switch | Ralf Otremba, Klaus Schiess | 2023-03-14 |
| 11329126 | Method of manufacturing a superjunction semiconductor device | Armin Tilke, Hans Weber, Christian Fachmann, Roman Knoefler, Gabor Mezoesi +3 more | 2022-05-10 |
| 11217510 | Semiconductor device including a bidirectional switch | Ralf Otremba, Klaus Schiess | 2022-01-04 |
| 10923432 | Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark | Andreas Moser, Hans Weber, Johannes Baumgartl, Gabor Mezoesi | 2021-02-16 |
| 10600740 | Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark | Andreas Moser, Hans Weber, Johannes Baumgartl, Gabor Mezoesi | 2020-03-24 |
| 10347490 | Production of an integrated circuit including electrical contact on SiC | Roland Rupp, Thomas Gutt | 2019-07-09 |
| 10236258 | Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark | Andreas Moser, Hans Weber, Johannes Baumgartl, Gabor Mezoesi | 2019-03-19 |
| 9634108 | Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching | Roland Rupp, Stefan Woehlert, Thomas Gutt | 2017-04-25 |
| 9530764 | Semiconductor arrangement with active drift zone | Rolf Weis, Gerald Deboy, Armin Willmeroth, Hans Weber | 2016-12-27 |
| 9431392 | Electronic circuit having adjustable transistor device | Walter Rieger, Hans Weber, Gerhard Nöbauer, Martin Pölzl, Martin Vielemeyer +1 more | 2016-08-30 |
| 9391154 | Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching | Roland Rupp, Stefan Woehlert, Thomas Gutt | 2016-07-12 |
| 9263443 | Semiconductor device including a normally-off transistor and transistor cells of a normally-on GaN HEMT | Ralf Siemieniec | 2016-02-16 |
| 9209281 | Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching | Roland Rupp, Stefan Woehlert, Thomas Gutt | 2015-12-08 |
| 8895422 | Production of an integrated circuit including electrical contact on SiC | Roland Rupp, Thomas Gutt | 2014-11-25 |
| 8866253 | Semiconductor arrangement with active drift zone | Rolf Weis, Gerald Deboy, Armin Willmeroth, Hans Weber | 2014-10-21 |
| 8803205 | Transistor with controllable compensation regions | Armin Willmeroth, Franz Hirler, Hans Weber | 2014-08-12 |
| 8618644 | Electronic device and manufacturing thereof | Ralf Otremba, Marco Seibt, Uwe Kirchner, Wolfgang Peinhopf, Andreas Schloegl +1 more | 2013-12-31 |
| 8530904 | Semiconductor device including a normally-on transistor and a normally-off transistor | Ralf Siemieniec | 2013-09-10 |
| 8525254 | Silicone carbide trench semiconductor device | Ralf Siemieniec | 2013-09-03 |
| 8492771 | Heterojunction semiconductor device and method | Michael Rüb, Armin Willmeroth, Franz Hirler | 2013-07-23 |
| 8450196 | Production of an integrated circuit including electrical contact on SiC | Roland Rupp, Thomas Gutt | 2013-05-28 |
| 8421147 | MOS transistor with elevated gate drain capacity | Armin Willmeroth | 2013-04-16 |
| 8253225 | Device including semiconductor chip and leads coupled to the semiconductor chip and manufacturing thereof | Ralf Otremba, Marco Seibt, Uwe Kirchner, Wolfgang Peinhopf, Andreas Schloegl +1 more | 2012-08-28 |
| 8188482 | SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method | Kathrin Rueschenschmidt, Oliver Haeberlen, Franz Auerbach | 2012-05-29 |