Issued Patents All Time
Showing 26–50 of 145 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10304952 | Power semiconductor device with dV/dt controllability and cross-trench arrangement | Matteo Dainese, Alexander Philippou, Markus Bina, Ingo Dirnstorfer, Erich Griebl +3 more | 2019-05-28 |
| 10249746 | Bipolar transistor with superjunction structure | Franz-Josef Niedernostheide, Hans-Joachim Schulze, Stephan Voss | 2019-04-02 |
| 10164079 | Power semiconductor device | Johannes Georg Laven | 2018-12-25 |
| 10134835 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Franz-Josef Niedernostheide, Christian Philipp Sandow | 2018-11-20 |
| 10096531 | Semiconductor device with sensor potential in the active region | Christian Jaeger, Johannes Georg Laven, Alexander Philippou | 2018-10-09 |
| 10038052 | Semiconductor device with channelstopper and method for producing the same | Elmar Falck, Hans-Joachim Schulze, Stephan Voss | 2018-07-31 |
| 9966461 | Power semiconductor device | Johannes Georg Laven | 2018-05-08 |
| 9954065 | Method of forming a semiconductor device and semiconductor device | Anton Mauder, Hans-Joachim Schulze, Ingo Muri, Iris Moder, Johannes Baumgartl | 2018-04-24 |
| 9917181 | Bipolar transistor with superjunction structure | Franz-Josef Niedernostheide, Hans-Joachim Schulze, Stephan Voss | 2018-03-13 |
| 9899377 | Insulated gate semiconductor device with soft switching behavior | Hans-Joachim Schulze, Franz-Josef Niedernostheide, Francisco Javier Santos Rodriguez, Stephan Voss, Wolfgang Wagner | 2018-02-20 |
| 9865717 | Semiconductor device | Stephan Voss | 2018-01-09 |
| 9859272 | Semiconductor device with a reduced band gap zone | Hans-Joachim Schulze, Holger Huesken, Franz-Josef Niedernostheide, Roman Roth, Christian Philipp Sandow +2 more | 2018-01-02 |
| 9825136 | Semiconductor component and integrated circuit | Franz-Josef Niedernostheide, Manfred Pfaffenlehner, Hans-Joachim Schulze, Holger Schulze, Christoph Weiss | 2017-11-21 |
| 9741795 | IGBT having at least one first type transistor cell and reduced feedback capacitance | Christian Philipp Sandow, Hans-Joachim Schulze, Johannes Georg Laven, Franz-Josef Niedernostheide, Hans Peter Felsl | 2017-08-22 |
| 9711626 | Reverse-conducting IGBT | Dorothea Werber | 2017-07-18 |
| 9691887 | Semiconductor device with variable resistive element | Alexander Philippou, Christian Jaeger, Johannes Georg Laven | 2017-06-27 |
| 9608092 | Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench | Jens Peter Konrath, Hans-Joachim Schulze, Roland Rupp, Wolfgang Werner | 2017-03-28 |
| 9577080 | Power semiconductor device | Holger Huesken, Hans-Joachim Schulze | 2017-02-21 |
| 9571087 | Method of operating a reverse conducting IGBT | Dorothea Werber, Anton Mauder, Carsten Schaeffer | 2017-02-14 |
| 9553178 | Semiconductor component with an emitter control electrode | Franz Hirler, Anton Mauder, Hans-Joachim Schulze | 2017-01-24 |
| 9543405 | Method of manufacturing a reduced free-charge carrier lifetime semiconductor structure | Holger Ruething, Hans-Joachim Schulze, Frank Hille | 2017-01-10 |
| 9536958 | Semiconductor substrate and a method of manufacturing the same | Hans-Joachim Schulze, Hans-Joerg Timme | 2017-01-03 |
| 9536740 | Increasing the doping efficiency during proton irradiation | Hans-Joachim Schulze, Johannes Georg Laven, Franz-Josef Niedernostheide | 2017-01-03 |
| 9515149 | Power semiconductor device | Holger Huesken, Hans-Joachim Schulze | 2016-12-06 |
| 9490354 | Insulated gate bipolar transistor | Holger Huesken, Hans-Joachim Schulze | 2016-11-08 |