RB

Reiner Barthelmess

Infineon Technologies Ag: 18 patents #440 of 7,486Top 6%
IK Infineon Technologies Bipolar Gmbh & Co. Kg: 6 patents #1 of 17Top 6%
SA Siemens Aktiengesellschaft: 1 patents #10,653 of 22,248Top 50%
Overall (All Time): #142,649 of 4,157,543Top 4%
27
Patents All Time

Issued Patents All Time

Showing 1–25 of 27 patents

Patent #TitleCo-InventorsDate
12342581 Method and device for producing an edge structure of a semiconductor component Tobias Gamon, Uwe Kellner-Werdehausen, Sebastian Sommer 2025-06-24
11973147 Power semiconductor component for voltage limiting, arrangement having two power semiconductor components, and a method for voltage limiting Juergen Schiele, Uwe Kellner-Werdehausen, Sebastian Sommer 2024-04-30
11664445 Short-circuit semiconductor component and method for operating it Mario Schenk, Peter Weidner, Dirk Pikorz, Markus Droldner, Michael Stelte +4 more 2023-05-30
11646365 Short-circuit semiconductor component and method for operating same Uwe Kellner-Werdehausen, Michael Stelte, Markus Droldner, Dirk Pikorz, Peter Weidner +2 more 2023-05-09
10008486 Disc-shaped thyristor for a plurality of plated-through semiconductor components Mario Schenk, Jens Przybilla, Joerg Dorn 2018-06-26
9876004 Semiconductor component including a short-circuit structure Hans-Joachim Schulze, Franz-Josef Niedernostheide, Uwe Kellner-Werdehausen 2018-01-23
9269769 Semiconductor component including a short-circuit structure Hans-Joachim Schulze, Franz-Josef Niedernostheide, Uwe Kellner-Werdehausen 2016-02-23
8946867 Semiconductor component with optimized edge termination Hans-Joachim Schulze, Uwe Kellner-Werdehausen, Josef Lutz, Thomas Basler 2015-02-03
8415710 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method Hans-Joachim Schulze, Franz-Josef Niedernostheide, Uwe Kellner-Werdehausen 2013-04-09
8187937 Semiconductor component and method for producing the same Hans-Joachim Schulze 2012-05-29
8178411 Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone Anton Mauder, Franz-Josef Niedernostheide, Hans-Joachim Schulze 2012-05-15
8034700 Method of fabricating a diode Hans-Joachim Schulze, Franz-Josef Niedernostheide 2011-10-11
8018064 Arrangement including a semiconductor device and a connecting element Uwe Kellner-Werdehausen, Hans-Joachim Schulze, Heinrich Gerstenkoeper, Ralf Joerke 2011-09-13
7884389 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method Hans-Joachim Schulze, Franz-Josef Niedernostheide, Uwe Kellner-Werdehausen 2011-02-08
7838969 Diode Hans-Joachim Schulze, Franz-Josef Niedernostheide 2010-11-23
7812368 High speed diode Hans-Joachim Schulze, Franz-Josef Niedernostheide 2010-10-12
7749876 Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone Anton Mauder, Franz-Josef Niedernostheide, Hans-Joachim Schulze 2010-07-06
7687826 Thyristor with recovery protection Hans-Joachim Schulze, Franz-Josef Niedernostheide, Uwe Kellner-Werdehausen 2010-03-30
7667297 Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone Anton Mauder, Franz-Josef Niedernostheide, Hans-Joachim Schulze 2010-02-23
7629665 Semiconductor component with a channel stop zone Hans-Joachim Schulze 2009-12-08
7361970 Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone Anton Mauder, Franz-Josef Niedernostheide, Hans-Joachim Schulze 2008-04-22
7319250 Semiconductor component and method for producing the same Hans-Joachim Schulze 2008-01-15
7268079 Method for fabricating a semiconductor having a field zone Elmar Falck, Franz-Josef Niedernostheide, Hans-Joachim Schulze 2007-09-11
6770917 High-voltage diode Frank Pfirsch, Anton Mauder, Gerhard Schmidt 2004-08-03
6696705 Power semiconductor component having a mesa edge termination Gerhard Schmidt 2004-02-24