Issued Patents All Time
Showing 26–45 of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10665706 | Power semiconductor transistor | Anton Mauder, Franz-Josef Niedernostheide | 2020-05-26 |
| 10644141 | Power semiconductor device with dV/dt controllability | Caspar Leendertz, Markus Bina | 2020-05-05 |
| 10469057 | Method for self adaption of gate current controls by capacitance measurement of a power transistor | Wolfgang Frank | 2019-11-05 |
| 10453918 | Power semiconductor device having cells with channel regions of different conductivity types | Anton Mauder, Franz-Josef Niedernostheide | 2019-10-22 |
| 10396074 | Power semiconductor device having different channel regions | Anton Mauder, Franz-Josef Niedernostheide | 2019-08-27 |
| 10388734 | Insulated gate bipolar transistor device having a fin structure | Franz Josef Niedemostheide, Vera van Treek | 2019-08-20 |
| 10367057 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Franz-Josef Niedernostheide, Frank Pfirsch | 2019-07-30 |
| 10340336 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Franz-Josef Niedernostheide | 2019-07-02 |
| 10326009 | Power semiconductor transistor having fully depleted channel region | Anton Mauder, Franz-Josef Niedernostheide | 2019-06-18 |
| 10141404 | Power semiconductor device having fully depleted channel region | Anton Mauder, Franz-Josef Niedernostheide | 2018-11-27 |
| 10134835 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Franz-Josef Niedernostheide, Frank Pfirsch | 2018-11-20 |
| 10083960 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Franz-Josef Niedernostheide | 2018-09-25 |
| 9997517 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Franz-Josef Niedernostheide | 2018-06-12 |
| 9978837 | Insulated gate bipolar transistor device having a fin structure | Franz-Josef Niedernostheide, Vera van Treek | 2018-05-22 |
| 9859272 | Semiconductor device with a reduced band gap zone | Hans-Joachim Schulze, Holger Huesken, Franz-Josef Niedernostheide, Frank Pfirsch, Roman Roth +2 more | 2018-01-02 |
| 9859408 | Power semiconductor transistor having fully depleted channel region | Anton Mauder, Franz-Josef Niedernostheide | 2018-01-02 |
| 9819341 | Semiconductor devices | Franz-Josef Niedernostheide | 2017-11-14 |
| 9741795 | IGBT having at least one first type transistor cell and reduced feedback capacitance | Hans-Joachim Schulze, Johannes Georg Laven, Franz-Josef Niedernostheide, Frank Pfirsch, Hans Peter Felsl | 2017-08-22 |
| 9525029 | Insulated gate bipolar transistor device, semiconductor device and method for forming said devices | Franz-Josef Niedernostheide, Vera van Treek | 2016-12-20 |
| 9166027 | IGBT with reduced feedback capacitance | Hans-Joachim Schulze, Johannes Georg Laven, Franz-Josef Niedernostheide, Frank Pfirsch, Hans Peter Felsl | 2015-10-20 |