Issued Patents All Time
Showing 26–50 of 137 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11158735 | Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof | David Laforet, Cedric Ouvrard | 2021-10-26 |
| 11145755 | Silicon carbide semiconductor component with edge termination structure | Larissa Wehrhahn-Kilian, Rudolf Elpelt, Roland Rupp, Bernd Zippelius | 2021-10-12 |
| 11133378 | Semiconductor device including trench contact structure and manufacturing method | Wolfgang Bergner | 2021-09-28 |
| 11101343 | Silicon carbide field-effect transistor including shielding areas | Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Rudolf Elpelt, Romain Esteve +5 more | 2021-08-24 |
| 11043560 | Silicon carbide semiconductor component comprising trench gate structures and shielding regions | Wolfgang Bergner | 2021-06-22 |
| 11004945 | Semiconductor device with spicular-shaped field plate structures and a current spread region | Michael Hutzler | 2021-05-11 |
| 10991812 | Transistor device with a rectifier element between a field electrode and a source electrode | Robert Haase, Gerhard Noebauer, Martin Poelzl | 2021-04-27 |
| 10950696 | Silicon carbide semiconductor component | Thomas Basler, Hans-Joachim Schulze | 2021-03-16 |
| 10937784 | Method of manufacturing a semiconductor device | Mihai Draghici, Jens Peter Konrath | 2021-03-02 |
| 10896952 | SiC device and methods of manufacturing thereof | Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve +5 more | 2021-01-19 |
| 10872957 | Semiconductor device with needle-shaped field plate structures | Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet, Cedric Ouvrard +1 more | 2020-12-22 |
| 10868173 | Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof | Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, David Laforet +2 more | 2020-12-15 |
| 10811499 | Wide bandgap semiconductor device including transistor cells and compensation structure | Dethard Peters | 2020-10-20 |
| 10734514 | Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region | Thomas Aichinger, Romain Esteve, Dethard Peters, Roland Rupp | 2020-08-04 |
| 10727331 | Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof | Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, David Laforet +2 more | 2020-07-28 |
| 10727330 | Semiconductor device with diode region | Wolfgang Bergner, Romain Esteve, Dethard Peters | 2020-07-28 |
| 10714609 | Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas | Thomas Aichinger, Dethard Peters | 2020-07-14 |
| 10700192 | Semiconductor device having a source electrode contact trench | Wolfgang Bergner, Romain Esteve, Dethard Peters | 2020-06-30 |
| 10700182 | Semiconductor device with transistor cells and a drift structure and method of manufacturing | Thomas Aichinger, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Dethard Peters +1 more | 2020-06-30 |
| 10700172 | Semiconductor device and method for fabricating a semiconductor device | Michael Hutzler, Franz Hirler | 2020-06-30 |
| 10679983 | Method of producing a semiconductor device | Dethard Peters, Romain Esteve | 2020-06-09 |
| 10593668 | Semiconductor device and corresponding manufacturing method | Mihai Draghici, Jens Peter Konrath | 2020-03-17 |
| 10586845 | SiC trench transistor device and methods of manufacturing thereof | Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve +5 more | 2020-03-10 |
| 10566426 | Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer | Anton Mauder, Oliver Hellmund, Peter Irsigler, Jens Peter Konrath, David Laforet +5 more | 2020-02-18 |
| 10553685 | SiC semiconductor device with offset in trench bottom | Thomas Aichinger, Romain Esteve, Daniel Kueck | 2020-02-04 |