Issued Patents All Time
Showing 76–100 of 137 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9793387 | Semiconductor device including a vertical PN junction between a body region and a drift region | Michael Hutzler, Georg Ehrentraut, Matthias Kuenle | 2017-10-17 |
| 9768290 | Semiconductor device with metal-filled groove in polysilicon gate electrode | Oliver Blank, Li Juin Yip | 2017-09-19 |
| 9728614 | Semiconductor device comprising a field electrode | David Laforet, Oliver Blank, Franz Hirler | 2017-08-08 |
| 9722036 | Semiconductor device with field electrode structure | Franz Hirler, Oliver Blank | 2017-08-01 |
| 9711660 | JFET and method of manufacturing thereof | Jens Peter Konrath, Hans-Joachim Schulze, Cedric Ouvrard | 2017-07-18 |
| 9680004 | Power MOSFET with seperate gate and field plate trenches | David Laforet, Oliver Blank, Michael Hutzler, Cedric Ouvrard, Li Juin Yip | 2017-06-13 |
| 9653598 | Transistor component | Michael Hutzler | 2017-05-16 |
| 9627520 | MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell array | Franz Hirler, Christian Geissler, Oliver Blank, Maximilian Roesch | 2017-04-18 |
| 9620636 | Semiconductor device with field electrode structures in a cell area and termination structures in an edge area | Oliver Blank, Franz Hirler, Michael Hutzler, Martin Poelzl | 2017-04-11 |
| 9577073 | Method of forming a silicon-carbide device with a shielded gate | Romain Esteve, Dethard Peters, Wolfgang Bergner, Thomas Aichinger, Daniel Kueck | 2017-02-21 |
| 9570438 | Avalanche-rugged quasi-vertical HEMT | Gilberto Curatola | 2017-02-14 |
| 9570553 | Semiconductor chip with integrated series resistances | Gerhard Noebauer, Maximilian Roesch, Martin Poelzl, Michael Hutzler | 2017-02-14 |
| 9543386 | Semiconductor device with field electrode structures, gate structures and auxiliary diode structures | Oliver Blank, Franz Hirler, Martin Vielemeyer | 2017-01-10 |
| 9536960 | Semiconductor device comprising a field electrode | David Laforet, Franz Hirler, Oliver Blank | 2017-01-03 |
| 9478655 | Semiconductor device having a lower diode region arranged below a trench | Wolfgang Bergner, Romain Esteve, Dethard Peters | 2016-10-25 |
| 9450062 | Semiconductor device having polysilicon plugs with silicide crystallites | Michael Hutzler, Oliver Blank | 2016-09-20 |
| 9431499 | Method of manufacturing a stress-controlled HEMT | Gilberto Curatola | 2016-08-30 |
| 9406763 | Stress-reduced field-effect semiconductor device and method for forming therefor | Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder +2 more | 2016-08-02 |
| 9384983 | Method of manufacturing a vertical semiconductor device | Jens Peter Konrath | 2016-07-05 |
| 9356017 | Switch circuit and semiconductor device | Gilberto Curatola | 2016-05-31 |
| 9324817 | Method for forming a transistor device having a field electrode | Oliver Blank | 2016-04-26 |
| 9293558 | Semiconductor device | Dethard Peters, Romain Esteve | 2016-03-22 |
| 9276135 | Junction field effect transistor with vertical PN junction | Cedric Ouvrard | 2016-03-01 |
| 9263443 | Semiconductor device including a normally-off transistor and transistor cells of a normally-on GaN HEMT | Michael Treu | 2016-02-16 |
| 9252251 | Semiconductor component with a space saving edge structure | Franz Hirler, Christian Geissler, Oliver Blank, Maximilian Roesch | 2016-02-02 |