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Trench field electrode termination structure for transistor devices |
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Schottky integrated high voltage terminations and related HVIC applications |
Donald He, Siddharth Kiyawat, Min Fang |
2020-12-29 |
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Trench FET with ruggedness enhancement regions |
Ashita Mirchandani, Timothy Henson, Ling Ma |
2018-06-05 |
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IGBT having deep gate trench |
Yi Tang, Chiu Ng |
2018-01-02 |
| 9818743 |
Power semiconductor device with contiguous gate trenches and offset source trenches |
Kapil Kelkar, Timothy Henson, Ling Ma, Hugo Burke, Alain Charles |
2017-11-14 |
| 9653597 |
Method for fabricating a shallow and narrow trench FET and related structures |
Timothy Henson, Ling Ma, Hugo Burke, David Paul Jones, Kapil Kelkar +1 more |
2017-05-16 |
| 9590096 |
Vertical FET having reduced on-resistance |
Harsh Naik, Timothy Henson |
2017-03-07 |
| 9496378 |
IGBT with buried emitter electrode |
Yi Tang, Chiu Ng |
2016-11-15 |
| 9299819 |
Deep gate trench IGBT |
Yi Tang, Chiu Ng |
2016-03-29 |
| 9257983 |
Level shifter utilizing a capacitive isolation barrier |
Min Fang, Massimo Grasso |
2016-02-09 |
| 9245985 |
IGBT with buried emitter electrode |
Yi Tang, Chiu Ng |
2016-01-26 |
| 8988128 |
Level shifter having feedback signal from high voltage circuit |
Min Fang, Massimo Grasso |
2015-03-24 |
| 8878591 |
Level shifter utilizing bidirectional signaling through a capacitive isolation barrier |
Min Fang, Massimo Grasso |
2014-11-04 |
| 8860194 |
Buck converter power package |
Ling Ma, Andrew N. Sawle, David Paul Jones, Timothy Henson, Vijay Viswanathan +1 more |
2014-10-14 |
| 8076672 |
Passivation structure with voltage equalizing loops |
— |
2011-12-13 |
| 7183626 |
Passivation structure with voltage equalizing loops |
— |
2007-02-27 |
| 6707101 |
Integrated series schottky and FET to allow negative drain voltage |
— |
2004-03-16 |
| 6529034 |
Integrated series schottky and FET to allow negative drain voltage |
— |
2003-03-04 |
| 6380004 |
Process for manufacturing radhard power integrated circuit |
Milton J. Boden, Jr., Iulia Rusu |
2002-04-30 |
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Graded concentration epitaxial substrate for semiconductor device having resurf diffusion |
— |
1999-01-19 |
| 5801418 |
High voltage power integrated circuit with level shift operation and without metal crossover |
— |
1998-09-01 |
| 5801431 |
MOS gated semiconductor device with source metal covering the active gate |
— |
1998-09-01 |
| 5798538 |
IGBT with integrated control |
Bruno Nadd |
1998-08-25 |
| 5686754 |
Polysilicon field ring structure for power IC |
Chongwook Chris Choi |
1997-11-11 |
