Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426240 | Semiconductor structure with a plurality of connection lines | Jianfeng Xiao, Xiaojie Li | 2025-09-23 |
| 12426328 | Semiconductor structure and manufacturing method thereof | Jianfeng Xiao | 2025-09-23 |
| 12419038 | Semiconductor structure, method for forming same, and layout structure | Xiaojie Li, Daohuan FENG, Meng-Chi Huang | 2025-09-16 |
| 12419028 | Semiconductor structure and method for forming same | — | 2025-09-16 |
| 12419033 | Semiconductor structure and manufacturing method thereof | — | 2025-09-16 |
| 12402300 | Semiconductor device having channel regions distributed on two opposite sides of a gate electrode | Mengmeng YANG | 2025-08-26 |
| 12396156 | Memory structure and manufacturing method thereof, and semiconductor structure | — | 2025-08-19 |
| 12389588 | Memory and forming method thereof | — | 2025-08-12 |
| 12336167 | Memory and forming method thereof | — | 2025-06-17 |
| 12336168 | Method of manufacturing semiconductor structure and semiconductor structure | — | 2025-06-17 |
| 12176213 | Semiconductor structure and manufacturing method using different ion implantation energy | — | 2024-12-24 |
| 11017979 | Method of ion implantation and an apparatus for the same | Weiyimin Dong | 2021-05-25 |
| 10164078 | Bipolar semiconductor device with multi-trench enhancement regions | Florin Udrea, Gianluca Camuso, Alice Pei-Shan Hsieh, Chiu Ng, Rajeev Krishna Vytla +1 more | 2018-12-25 |
| 10115812 | Semiconductor device having a superjunction structure | Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Rajeev Krishna Vytla | 2018-10-30 |
| 9871128 | Bipolar semiconductor device with sub-cathode enhancement regions | Florin Udrea, Gianluca Camuso, Alice Pei-Shan Hsieh, Chiu Ng, Rajeev Krishna Vytla +1 more | 2018-01-16 |
| 9859407 | IGBT having deep gate trench | Niraj Ranjan, Chiu Ng | 2018-01-02 |
| 9831330 | Bipolar semiconductor device having a deep charge-balanced structure | Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Rajeev Krishna Vytla | 2017-11-28 |
| 9799725 | IGBT having a deep superjunction structure | Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Rajeev Krishna Vytla | 2017-10-24 |
| 9768284 | Bipolar semiconductor device having a charge-balanced inter-trench structure | Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Rajeev Krishna Vytla | 2017-09-19 |
| 9685506 | IGBT having an inter-trench superjunction structure | Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Rajeev Krishna Vytla | 2017-06-20 |
| 9496378 | IGBT with buried emitter electrode | Niraj Ranjan, Chiu Ng | 2016-11-15 |
| 9299819 | Deep gate trench IGBT | Niraj Ranjan, Chiu Ng | 2016-03-29 |
| 9245985 | IGBT with buried emitter electrode | Niraj Ranjan, Chiu Ng | 2016-01-26 |