Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › IGBT with integrated control

IGBT with integrated control

US Patent 5798538 · Granted Aug 25, 1998

Estimated economic value: $3,667,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Trench field electrode termination structure for transistor devices2022
Schottky integrated high voltage terminations and related HVIC applications2020
Trench FET with ruggedness enhancement regions2018
IGBT having deep gate trench2018
Power semiconductor device with contiguous gate trenches and offset source trenc2017
Method for fabricating a shallow and narrow trench FET and related structures2017
Vertical FET having reduced on-resistance2017
IGBT with buried emitter electrode2016
Deep gate trench IGBT2016
Level shifter utilizing a capacitive isolation barrier2016
IGBT with buried emitter electrode2016
Level shifter having feedback signal from high voltage circuit2015