Issued Patents All Time
Showing 26–50 of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8785278 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Madhur Bobde, Anup Bhalla, Ji Pan +2 more | 2014-07-22 |
| 8742401 | Field effect transistor with gated and non-gated trenches | Hamza Yilmaz, Steven Sapp, Nathan Kraft, Ashok Challa | 2014-06-03 |
| 8680611 | Field effect transistor and schottky diode structures | Christopher Boguslaw Kocon, Steven Sapp, Paul Thorup, Dean E. Probst, Robert Herrick +3 more | 2014-03-25 |
| 8610235 | Trench MOSFET with integrated Schottky barrier diode | Yi Su, Jongoh Kim, Hong Chang, Hamza Yilmaz, Daniel Ng | 2013-12-17 |
| 8592895 | Field effect transistor with source, heavy body region and shielded gate | Hamza Yilmaz, Steven Sapp, Nathan Kraft, Ashok Challa | 2013-11-26 |
| 8563377 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Dean E. Probst | 2013-10-22 |
| 8441069 | Structure and method for forming trench-gate field effect transistor with source plug | Hamza Yilmaz, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst, Nathan Kraft +5 more | 2013-05-14 |
| 8193581 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Dean E. Probst, Ashok Challa | 2012-06-05 |
| 8174067 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Dean E. Probst | 2012-05-08 |
| 8063442 | Power device with improved edge termination | Hamza Yilmaz | 2011-11-22 |
| 8043913 | Method of forming trench-gate field effect transistors | Hamza Yilmaz, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst, Nathan Kraft +5 more | 2011-10-25 |
| 7923776 | Trench-gate field effect transistor with channel enhancement region and methods of forming the same | Hamza Yilmaz, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst, Nathan Kraft +5 more | 2011-04-12 |
| 7863708 | Power device edge termination having a resistor with one end biased to source voltage | Hamza Yilmaz | 2011-01-04 |
| 7767524 | Method and structure for forming a shielded gate field effect transistor | Hamza Yilmaz, Steven Sapp, Nathan Kraft, Ashok Challa | 2010-08-03 |
| 7768034 | Tapered voltage polysilicon diode electrostatic discharge circuit for power MOSFETs and ICs | Hamza Yilmaz, Steven Sapp | 2010-08-03 |
| 7625793 | Power MOS device with improved gate charge performance | — | 2009-12-01 |
| 7625799 | Method of forming a shielded gate field effect transistor | Hamza Yilmaz, Steven Sapp, Nathan Kraft, Ashok Challa | 2009-12-01 |
| 7521773 | Power device with improved edge termination | Hamza Yilmaz | 2009-04-21 |
| 7514322 | Shielded gate field effect transistor | Hamza Yilmaz, Steven Sapp, Nathan Kraft, Ashok Challa | 2009-04-07 |
| 7504306 | Method of forming trench gate field effect transistor with recessed mesas | Steven Sapp, Hamza Yilmaz, Christopher L. Rexer | 2009-03-17 |
| 7504303 | Trench-gate field effect transistors and methods of forming the same | Hamza Yilmaz, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst, Nathan Kraft +5 more | 2009-03-17 |
| 7416948 | Trench FET with improved body to gate alignment | Nathan Kraft, Ashok Challa, Steven Sapp, Hamza Yilmaz, Dean E. Probst +5 more | 2008-08-26 |
| 7393749 | Charge balance field effect transistor | Hamza Yilmaz, Steven Sapp, Nathan Kraft, Ashok Challa | 2008-07-01 |
| 6673680 | Field coupled power MOSFET bus architecture using trench technology | — | 2004-01-06 |
| 6534825 | Power MOS device with improved gate charge performance | — | 2003-03-18 |