| 12490451 |
Process of forming an electronic device including a component structure adjacent to a trench |
Balaji Padmanabhan, Zia Hossain, Peter A. Burke, Sauvik Chowdhury |
2025-12-02 |
|
| 12278266 |
Reverse recovery charge reduction in semiconductor devices |
Shengling Deng, Zia Hossain |
2025-04-15 |
|
| 12051967 |
Integrated transistor and resistor-diode-capacitor snubber |
Joseph A. Yedinak, Balaji Padmanabhan, Peter A. Burke, Jeffery A. Neuls, Ashok Challa |
2024-07-30 |
$63,142,000 |
| 11776997 |
Reverse recovery charge reduction in semiconductor devices |
Shengling Deng, Zia Hossain |
2023-10-03 |
$81,481,000 |
| 11742420 |
Semiconductor device and structure therefor |
Peter A. Burke, Prasad Venkatraman |
2023-08-29 |
$61,938,000 |
| 11621331 |
Electronic device including a charge storage component |
Gary H. Loechelt, Balaji Padmanabhan, Tirthajyoti Sarkar, Prasad Venkatraman, Muh-Ling Ger |
2023-04-04 |
$79,391,000 |
| 11411077 |
Electronic device including doped regions and a trench between the doped regions |
Gary H. Loechelt, Balaji Padmanabhan, Tirthajyoti Sarkar, Prasad Venkatraman, Muh-Ling Ger |
2022-08-09 |
$72,149,000 |
| 11227946 |
Trench MOSFET contacts |
Prasad Venkatraman |
2022-01-18 |
$45,253,000 |
| 11217689 |
Method of forming a semiconductor device and structure therefor |
Peter A. Burke, Prasad Venkatraman |
2022-01-04 |
$68,504,000 |
| 11133381 |
Reverse recovery charge reduction in semiconductor devices |
Shengling Deng, Zia Hossain |
2021-09-28 |
$42,079,000 |
| 11075148 |
Stacked transistor assembly with dual middle mounting clips |
Jeffrey P. Gambino, David T. Price, Jeffery A. Neuls, Santosh Menon, Peter A. Burke +1 more |
2021-07-27 |
$17,457,000 |
| 11049956 |
Method of forming a semiconductor device |
Jeffery A. Neuls, Masaichi Eda, Peter A. Burke, Peter McGrath, Prasad Venkatraman |
2021-06-29 |
$26,252,000 |
| 10868113 |
Trench-based power semiconductor devices with increased breakdown voltage characteristics |
Joseph A. Yedinak, Ashok Challa, Daniel M. Kinzer |
2020-12-15 |
|
| 10600905 |
Trench MOSFET contacts |
Prasad Venkatraman |
2020-03-24 |
$19,973,000 |
| 10340372 |
Transistor device having a pillar structure |
Takashi Ogura, Mitsuru Soma, Takashi Hiroshima, Peter A. Burke, Toshimitsu Taniguchi |
2019-07-02 |
$9,586,000 |
| 10268046 |
Cube polarizer |
Austin L. Huang, Bin Wang, Hua Li |
2019-04-23 |
|
| 9798058 |
Wire grid polarizer with side region |
Qihong Wu, Eric Gardner, Mark Alan Davis |
2017-10-24 |
|
| 9726897 |
Cube polarizer with minimal optical path length difference |
Austin L. Huang, Bin Wang, Hua Li |
2017-08-08 |
|
| 9632223 |
Wire grid polarizer with side region |
Qihong Wu, Eric Gardner, Mark Alan Davis |
2017-04-25 |
|
| 9391193 |
Trench-based power semiconductor devices with increased breakdown voltage characteristics |
Joseph A. Yedinak, Ashok Challa, Daniel M. Kinzer, Daniel Calafut |
2016-07-12 |
$8,282,000 |
| 9354374 |
Polarizer with wire pair over rib |
Bin Wang, Ted Wangensteen, Rumyana Petrova, Mike Black, Steven Marks +1 more |
2016-05-31 |
|
| 9348076 |
Polarizer with variable inter-wire distance |
Bin Wang, Ted Wangensteen, Rumyana Petrova, Mike Black, Steven Marks |
2016-05-24 |
|
| 9293526 |
Trench-based power semiconductor devices with increased breakdown voltage characteristics |
Joseph A. Yedinak, Ashok Challa |
2016-03-22 |
$6,058,000 |
| 8963212 |
Trench-based power semiconductor devices with increased breakdown voltage characteristics |
Joseph A. Yedinak, Ashok Challa, Daniel M. Kinzer, Daniel Calafut |
2015-02-24 |
$15,191,000 |
| 8936985 |
Methods related to power semiconductor devices with thick bottom oxide layers |
Ashok Challa, Alan Elbanhawy, Steven Sapp, Peter H. Wilson, Babak S. Sani +7 more |
2015-01-20 |
$4,395,000 |