Issued Patents All Time
Showing 26–50 of 64 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8884365 | Trench-gate field effect transistor | Hamza Yilmaz, Daniel Calafut, Christopher Boguslaw Kocon, Steven Sapp, Nathan Kraft +5 more | 2014-11-11 |
| 8716783 | Power device with self-aligned source regions | Robert Herrick, Becky Losee | 2014-05-06 |
| 8680611 | Field effect transistor and schottky diode structures | Christopher Boguslaw Kocon, Steven Sapp, Paul Thorup, Robert Herrick, Becky Losee +3 more | 2014-03-25 |
| 8610205 | Inter-poly dielectric in a shielded gate MOSFET device | — | 2013-12-17 |
| 8563377 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Daniel Calafut | 2013-10-22 |
| 8564024 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Ashok Challa, Daniel M. Kinzer | 2013-10-22 |
| 8476133 | Method of manufacture and structure for a trench transistor having a heavy body region | Brian Mo, Duc Chau, Steven Sapp, Izak Bencuya | 2013-07-02 |
| 8441069 | Structure and method for forming trench-gate field effect transistor with source plug | Hamza Yilmaz, Daniel Calafut, Christopher Boguslaw Kocon, Steven Sapp, Nathan Kraft +5 more | 2013-05-14 |
| 8338285 | Shield contacts in a shielded gate MOSFET | Dixie Dunn, Paul Thorup, Michael D. Gruenhagen | 2012-12-25 |
| 8278702 | High density trench field effect transistor | James Pan, Scott L. Hunt, Hossein Paravi | 2012-10-02 |
| 8193581 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Ashok Challa, Daniel Calafut | 2012-06-05 |
| 8174067 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Daniel Calafut | 2012-05-08 |
| 8148749 | Trench-shielded semiconductor device | Thomas E. Grebs, Mark L. Rinehimer, Joseph A. Yedinak, Gary M. Dolny, John L. Benjamin | 2012-04-03 |
| 8143124 | Methods of making power semiconductor devices with thick bottom oxide layer | Ashok Challa, Alan Elbanhawy, Steven Sapp, Peter H. Wilson, Babak S. Sani +7 more | 2012-03-27 |
| 8043913 | Method of forming trench-gate field effect transistors | Hamza Yilmaz, Daniel Calafut, Christopher Boguslaw Kocon, Steven Sapp, Nathan Kraft +5 more | 2011-10-25 |
| 8044463 | Method of manufacturing a trench transistor having a heavy body region | Brian Mo, Duc Chau, Steven Sapp, Izak Bencuya | 2011-10-25 |
| 8034682 | Power device with trenches having wider upper portion than lower portion | Robert Herrick, Becky Losee | 2011-10-11 |
| 7998819 | Lateral drain MOSFET with improved clamping voltage control | Bruce D. Marchant | 2011-08-16 |
| 7952141 | Shield contacts in a shielded gate MOSFET | Dixie Dunn, Paul Thorup, Michael D. Gruenhagen | 2011-05-31 |
| 7923776 | Trench-gate field effect transistor with channel enhancement region and methods of forming the same | Hamza Yilmaz, Daniel Calafut, Christopher Boguslaw Kocon, Steven Sapp, Nathan Kraft +5 more | 2011-04-12 |
| 7799636 | Power device with trenches having wider upper portion than lower portion | Robert Herrick, Becky Losee | 2010-09-21 |
| 7781835 | Lateral drain MOSFET with improved clamping voltage control | Bruce D. Marchant | 2010-08-24 |
| 7736978 | Method of manufacturing a trench transistor having a heavy body region | Brian Mo, Duc Chau, Steven Sapp, Izak Bencuya | 2010-06-15 |
| 7696571 | Method of manufacturing a trench transistor having a heavy body region | Brian Mo, Duc Chau, Steven Sapp, Izak Bencuya | 2010-04-13 |
| 7598144 | Method for forming inter-poly dielectric in shielded gate field effect transistor | Robert Herrick, Fred Session | 2009-10-06 |