Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8936985 | Methods related to power semiconductor devices with thick bottom oxide layers | Ashok Challa, Alan Elbanhawy, Dean E. Probst, Steven Sapp, Peter H. Wilson +7 more | 2015-01-20 |
| 8716783 | Power device with self-aligned source regions | Robert Herrick, Dean E. Probst | 2014-05-06 |
| 8680611 | Field effect transistor and schottky diode structures | Christopher Boguslaw Kocon, Steven Sapp, Paul Thorup, Dean E. Probst, Robert Herrick +3 more | 2014-03-25 |
| 8143123 | Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices | Thomas E. Grebs, Rodney S. Ridley, Steven Sapp, Peter H. Wilson, Babak S. Sani +4 more | 2012-03-27 |
| 8143124 | Methods of making power semiconductor devices with thick bottom oxide layer | Ashok Challa, Alan Elbanhawy, Dean E. Probst, Steven Sapp, Peter H. Wilson +7 more | 2012-03-27 |
| 8034682 | Power device with trenches having wider upper portion than lower portion | Robert Herrick, Dean E. Probst | 2011-10-11 |
| 7799636 | Power device with trenches having wider upper portion than lower portion | Robert Herrick, Dean E. Probst | 2010-09-21 |
| 7595524 | Power device with trenches having wider upper portion than lower portion | Robert Herrick, Dean E. Probst | 2009-09-29 |
| 7344943 | Method for forming a trench MOSFET having self-aligned features | Robert Herrick, Dean E. Probst | 2008-03-18 |
| 7078296 | Self-aligned trench MOSFETs and methods for making the same | Duc Chau, Bruce D. Marchant, Dean E. Probst, Robert Herrick, James J. Murphy | 2006-07-18 |
| 6916745 | Structure and method for forming a trench MOSFET having self-aligned features | Robert Herrick, Dean E. Probst | 2005-07-12 |
| 6498108 | Method for removing surface contamination on semiconductor substrates | Densen Cao | 2002-12-24 |