Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-based power semiconductor devices with increased breakdown voltage characteristics

US Patent 8963212 · Granted Feb 24, 2015

Estimated economic value: $15,191,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Process of forming an electronic device including a component structure adjacent2025
Method for suppressing voltage overshoots2025
Transistor DV/DT control circuit2025
Monolithic high side gallium nitride device with integrated capacitive level shi2025
Circuits and methods for controlling a voltage of a semiconductor substrate2025
Integrated half-bridge power converter2025
Thermally enhanced electronic packages for GaN power integrated circuits2025
Reverse recovery charge reduction in semiconductor devices2025
Electronic device including a transistor structure2025
Integrated gallium nitride power device with protection circuits2025
Electronic packages with integral heat spreaders2025
Electronic packages with integral heat spreaders2025