Issued Patents All Time
Showing 26–50 of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8324711 | Precision high-frequency capacitor formed on semiconductor substrate | Haim Goldberger, Sik Lui, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel | 2012-12-04 |
| 8004063 | Precision high-frequency capacitor formed on semiconductor substrate | Haim Goldberger, Sik Lui, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel | 2011-08-23 |
| 7952145 | MOS transistor device in common source configuration | Stephen L. Colino | 2011-05-31 |
| 7868381 | Structures of and methods of fabricating trench-gated MIS devices | Anup Bhalla, Domon Pitzer, Xiaorong Shi, Sik Lui | 2011-01-11 |
| 7745846 | LDMOS integrated Schottky diode | Shuming Xu, Christopher Boguslaw Kocon | 2010-06-29 |
| 7642164 | Method of forming self aligned contacts for a power MOSFET | Robert Xu | 2010-01-05 |
| 7589378 | Power LDMOS transistor | Christopher Boguslaw Kocon, Shuming Xu | 2009-09-15 |
| 7560808 | Chip scale power LDMOS device | Shuming Xu, Wenhua Dai | 2009-07-14 |
| 7446375 | Quasi-vertical LDMOS device having closed cell layout | Shuming Xu | 2008-11-04 |
| 7420247 | Power LDMOS transistor | Shuming Xu | 2008-09-02 |
| 7335946 | Structures of and methods of fabricating trench-gated MIS devices | Anup Bhalla, Dorman C. Pitzer, Xiaorong Shi, Sik Lui | 2008-02-26 |
| 7282765 | Power LDMOS transistor | Shuming Xu | 2007-10-16 |
| 7235845 | Power LDMOS transistor | Shuming Xu | 2007-06-26 |
| 7186609 | Method of fabricating trench junction barrier rectifier | Richard K. Williams | 2007-03-06 |
| 7151036 | Precision high-frequency capacitor formed on semiconductor substrate | Haim Goldberger, Sik Lui, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel | 2006-12-19 |
| 7005347 | Structures of and methods of fabricating trench-gated MIS devices | Anup Bhalla, Dorman C. Pitzer, Xiaorong Shi, Sik Lui | 2006-02-28 |
| 6858471 | Semiconductor substrate with trenches for reducing substrate resistance | Robert Xu, Mohammed Kasem | 2005-02-22 |
| 6838722 | Structures of and methods of fabricating trench-gated MIS devices | Anup Bhalla, Dorman C. Pitzer, Xiaorong Shi, Sik Lui | 2005-01-04 |
| 6621142 | Precision high-frequency capacitor formed on semiconductor substrate | Haim Goldberger, Sik Lui, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel | 2003-09-16 |
| 6621143 | Precision high-frequency capacitor on semiconductor substrate | Haim Goldberger, Sik Lui, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel | 2003-09-16 |
| 6538300 | Precision high-frequency capacitor formed on semiconductor substrate | Haim Goldberger, Sik Lui, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel | 2003-03-25 |
| 6534366 | Method of fabricating trench-gated power MOSFET | Mohamed N. Darwish, Dorman C. Pitzer | 2003-03-18 |
| 6392290 | Vertical structure for semiconductor wafer-level chip scale packages | Y. Mohammed Kasem, Yueh-Se Ho, Lee Luo, Chang-Sheng Chen, Eddy Tjhia +2 more | 2002-05-21 |
| 6348712 | High density trench-gated power MOSFET | Mohamed N. Darwish, Dorman C. Pitzer | 2002-02-19 |
| 6285060 | Barrier accumulation-mode MOSFET | Anup Bhalla | 2001-09-04 |