Issued Patents All Time
Showing 1–25 of 126 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12284817 | Trench-gated heterostructure and double-heterostructure active devices | Jun Zeng | 2025-04-22 |
| 12057482 | MOSFET with distributed doped P-shield zones under trenches | Jun Zeng, Shih-Tzung Su | 2024-08-06 |
| 11888047 | Lateral transistors and methods with low-voltage-drop shunt to body diode | Jun Zeng, Richard A. Blanchard | 2024-01-30 |
| 11316021 | High density power device with selectively shielded recessed field plate | Jun Zeng, Richard A. Blanchard | 2022-04-26 |
| 11289596 | Split gate power device and its method of fabrication | Jun Zeng, Kui Pu, Shih-Tzung Su | 2022-03-29 |
| 11028603 | Funicular arched steel truss falsework | Ahmed Yehia Abdel Aziz El-Sayed, Khaled Nassar | 2021-06-08 |
| 10720511 | Trench transistors and methods with low-voltage-drop shunt to body diode | Jun Zeng, Richard A. Blanchard | 2020-07-21 |
| 10720510 | Lateral transistors and methods with low-voltage-drop shunt to body diode | Jun Zeng, Richard A. Blanchard | 2020-07-21 |
| 10593813 | Vertical rectifier with added intermediate region | Richard A. Blanchard, Jun Zeng | 2020-03-17 |
| 10529810 | Lateral semiconductor power devices | Jun Zeng, Hamza Yilmaz, Richard A. Blanchard | 2020-01-07 |
| 10510863 | Power device having a polysilicon-filled trench with a tapered oxide thickness | Richard A. Blanchard, Jun Zeng | 2019-12-17 |
| 10325980 | Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges | Jun Zeng, Richard A. Blanchard | 2019-06-18 |
| 10186573 | Lateral power MOSFET with non-horizontal RESURF structure | Hamza Yilmaz, Richard A. Blanchard | 2019-01-22 |
| 10157983 | Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands | Jun Zeng, Wenfang Du, Richard A. Blanchard, Kui Pu, Shih-Tzung Su | 2018-12-18 |
| 10128353 | Trench transistors and methods with low-voltage-drop shunt to body diode | Jun Zeng, Richard A. Blanchard | 2018-11-13 |
| 10062788 | Semiconductor on insulator devices containing permanent charge | Amit Paul | 2018-08-28 |
| 10014365 | Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges | Jun Zeng, Richard A. Blanchard | 2018-07-03 |
| 10014404 | MOS-gated power devices, methods, and integrated circuits | Jun Zeng | 2018-07-03 |
| 9997614 | Lateral transistors and methods with low-voltage-drop shunt to body diode | Jun Zeng, Richard A. Blanchard | 2018-06-12 |
| 9947779 | Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage | Jun Zeng, Kui Pu, Shih-Tzung Su | 2018-04-17 |
| 9923556 | Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield | Jun Zeng | 2018-03-20 |
| 9859400 | Trench transistors and methods with low-voltage-drop shunt to body diode | Jun Zeng, Richard A. Blanchard | 2018-01-02 |
| 9847413 | Devices, components and methods combining trench field plates with immobile electrostatic charge | Jun Zeng | 2017-12-19 |
| 9842917 | Methods of operating power semiconductor devices and structures | Jun Zeng, Richard A. Blanchard | 2017-12-12 |
| 9812548 | Power device having a polysilicon-filled trench with a tapered oxide thickness | Richard A. Blanchard, Jun Zeng | 2017-11-07 |