Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12057482 | MOSFET with distributed doped P-shield zones under trenches | Jun Zeng, Mohamed N. Darwish | 2024-08-06 |
| 11289596 | Split gate power device and its method of fabrication | Jun Zeng, Kui Pu, Mohamed N. Darwish | 2022-03-29 |
| 10157983 | Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands | Jun Zeng, Mohamed N. Darwish, Wenfang Du, Richard A. Blanchard, Kui Pu | 2018-12-18 |
| 9947779 | Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage | Jun Zeng, Mohamed N. Darwish, Kui Pu | 2018-04-17 |
| 9761702 | Power MOSFET having planar channel, vertical current path, and top drain electrode | Jun Zeng, Mohamed N. Darwish, Kui Pu | 2017-09-12 |
| 9461127 | Vertical power MOSFET having planar channel and its method of fabrication | Jun Zeng, Mohamed N. Darwish, Kui Pu | 2016-10-04 |
| 9184248 | Vertical power MOSFET having planar channel and its method of fabrication | Jun Zeng, Mohamed N. Darwish, Kui Pu | 2015-11-10 |
| 9093522 | Vertical power MOSFET with planar channel and vertical field plate | Jun Zeng, Mohamed N. Darwish, Kui Pu | 2015-07-28 |
| 8581341 | Power MOSFET with embedded recessed field plate and methods of fabrication | Mohamed N. Darwish, Jun Zeng, Richard A. Blanchard | 2013-11-12 |
| 8294235 | Edge termination with improved breakdown voltage | Jun Zeng, Mohamed N. Darwish | 2012-10-23 |
| 7923804 | Edge termination with improved breakdown voltage | Jun Zeng, Mohamed N. Darwish | 2011-04-12 |
| 7799642 | Trench MOSFET and method of manufacture utilizing two masks | Jun Zeng, Poi Sun, Kao-Way Tu, Tai Chiang Chen, Long Lv +1 more | 2010-09-21 |
| 7687352 | Trench MOSFET and method of manufacture utilizing four masks | Jun Zeng, Poi Sun, Kao-Way Tu, Tai Chiang Chen, Long Lv +1 more | 2010-03-30 |