| 12057482 |
MOSFET with distributed doped P-shield zones under trenches |
Jun Zeng, Mohamed N. Darwish |
2024-08-06 |
| 11289596 |
Split gate power device and its method of fabrication |
Jun Zeng, Kui Pu, Mohamed N. Darwish |
2022-03-29 |
| 10157983 |
Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands |
Jun Zeng, Mohamed N. Darwish, Wenfang Du, Richard A. Blanchard, Kui Pu |
2018-12-18 |
| 9947779 |
Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage |
Jun Zeng, Mohamed N. Darwish, Kui Pu |
2018-04-17 |
| 9761702 |
Power MOSFET having planar channel, vertical current path, and top drain electrode |
Jun Zeng, Mohamed N. Darwish, Kui Pu |
2017-09-12 |
| 9461127 |
Vertical power MOSFET having planar channel and its method of fabrication |
Jun Zeng, Mohamed N. Darwish, Kui Pu |
2016-10-04 |
| 9184248 |
Vertical power MOSFET having planar channel and its method of fabrication |
Jun Zeng, Mohamed N. Darwish, Kui Pu |
2015-11-10 |
| 9093522 |
Vertical power MOSFET with planar channel and vertical field plate |
Jun Zeng, Mohamed N. Darwish, Kui Pu |
2015-07-28 |
| 8581341 |
Power MOSFET with embedded recessed field plate and methods of fabrication |
Mohamed N. Darwish, Jun Zeng, Richard A. Blanchard |
2013-11-12 |
| 8294235 |
Edge termination with improved breakdown voltage |
Jun Zeng, Mohamed N. Darwish |
2012-10-23 |
| 7923804 |
Edge termination with improved breakdown voltage |
Jun Zeng, Mohamed N. Darwish |
2011-04-12 |
| 7799642 |
Trench MOSFET and method of manufacture utilizing two masks |
Jun Zeng, Poi Sun, Kao-Way Tu, Tai Chiang Chen, Long Lv +1 more |
2010-09-21 |
| 7687352 |
Trench MOSFET and method of manufacture utilizing four masks |
Jun Zeng, Poi Sun, Kao-Way Tu, Tai Chiang Chen, Long Lv +1 more |
2010-03-30 |