Kui Pu — 7 Patents at Maxpower Semiconductor

Kui Pu has been granted 7 US patents while listed as an inventor at Maxpower Semiconductor. The first was granted in 2015 and the most recent in March 2022. Kui Pu ranks #680,018 of 4,157,543 US inventors in our database (top 16.4%). Patent records list Kui Pu in Chengdu, CN.

Issued Patents All Time

Showing 1–7 of 7 patents

Patent #	Title	Co-Inventors	Date
11289596	Split gate power device and its method of fabrication	Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su	2022-03-29
10157983	Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands	Jun Zeng, Mohamed N. Darwish, Wenfang Du, Richard A. Blanchard, Shih-Tzung Su	2018-12-18
9947779	Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage	Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su	2018-04-17
9761702	Power MOSFET having planar channel, vertical current path, and top drain electrode	Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su	2017-09-12
9461127	Vertical power MOSFET having planar channel and its method of fabrication	Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su	2016-10-04
9184248	Vertical power MOSFET having planar channel and its method of fabrication	Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su	2015-11-10
9093522	Vertical power MOSFET with planar channel and vertical field plate	Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su	2015-07-28

Kui Pu — 7 Patents

Issued Patents All Time

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