| 11289596 |
Split gate power device and its method of fabrication |
Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su |
2022-03-29 |
| 10157983 |
Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands |
Jun Zeng, Mohamed N. Darwish, Wenfang Du, Richard A. Blanchard, Shih-Tzung Su |
2018-12-18 |
| 9947779 |
Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage |
Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su |
2018-04-17 |
| 9761702 |
Power MOSFET having planar channel, vertical current path, and top drain electrode |
Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su |
2017-09-12 |
| 9461127 |
Vertical power MOSFET having planar channel and its method of fabrication |
Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su |
2016-10-04 |
| 9184248 |
Vertical power MOSFET having planar channel and its method of fabrication |
Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su |
2015-11-10 |
| 9093522 |
Vertical power MOSFET with planar channel and vertical field plate |
Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su |
2015-07-28 |