Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands

Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands

US Patent 10157983 · Granted Dec 18, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thermal image determination2025
Body pants2025
Article of clothing2025
Article of clothing2025
Adaptive simulation in additive manufacturing2025
Adaptive thermal diffusivity2025
Body shaping pants2025
Trench-gated heterostructure and double-heterostructure active devices2025
Trench-gated heterostructure and double-heterostructure active devices2025
Body shaping garment2025
Body shaping garment2025
Body shaping garment2025