| 8336488 |
Multi-station plasma reactor with multiple plasma regions |
Aihua Chen, Yijun Liu, Jinyuan Chen, Tuqiang Ni, Gerald Yin +1 more |
2012-12-25 |
|
| 7745329 |
Tungsten nitride atomic layer deposition processes |
Shulin Wang, Ulrich Kroemer, Aihua Chen, Ming Li |
2010-06-29 |
$7,165,000 |
| 7608300 |
Methods and devices to reduce defects in dielectric stack structures |
Christopher Dennis Bencher |
2009-10-27 |
$53,033,000 |
| 7429516 |
Tungsten nitride atomic layer deposition processes |
Shulin Wang, Ulrich Kroemer, Aihua Chen, Ming Li |
2008-09-30 |
$10,282,000 |
| 7335266 |
Method of forming a controlled and uniform lightly phosphorous doped silicon film |
Li Fu, Sheeba J. Panayil, Shulin Wang, Christopher Quentin, Aihua Chen +1 more |
2008-02-26 |
$21,345,000 |
| 7115499 |
Cyclical deposition of tungsten nitride for metal oxide gate electrode |
Shulin Wang, Ulrich Kroemer, Aihua Chen, Ming Li |
2006-10-03 |
$12,847,000 |
| 6982214 |
Method of forming a controlled and uniform lightly phosphorous doped silicon film |
Li Fu, Sheeba J. Panayil, Shulin Wang, Christopher Quentin, Aihua Chen +1 more |
2006-01-03 |
$78,745,000 |
| 6949203 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
Chang-Lin Hsieh, Diana Xiaobing Ma, Brian Sy-Yuan Shieh, Gerald Yin, Jennifer Y. Sun +2 more |
2005-09-27 |
$49,865,000 |
| 6884464 |
Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber |
R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin, Aihua Chen +4 more |
2005-04-26 |
$27,390,000 |
| 6833161 |
Cyclical deposition of tungsten nitride for metal oxide gate electrode |
Shulin Wang, Ulrich Kroemer, Aihua Chen, Ming Li |
2004-12-21 |
$24,351,000 |
| 6802906 |
Emissivity-change-free pumping plate kit in a single wafer chamber |
Xiaoliang Jin, Shulin Wang, Henry Ho, Steven Chen |
2004-10-12 |
$28,243,000 |
| 6793835 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
Claes Bjorkman, Brian Sy-Yuan Shieh, Gerald Yin |
2004-09-21 |
|
| 6726955 |
Method of controlling the crystal structure of polycrystalline silicon |
Shulin Wang, Steven Chen, Errol Antonio C. Sanchez |
2004-04-27 |
$41,702,000 |
| 6713127 |
Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
Janardhanan Anand Subramony, Yoshitaka Yokota, Ramaseshan Iyer, Aihua Chen |
2004-03-30 |
$49,571,000 |
| 6582522 |
Emissivity-change-free pumping plate kit in a single wafer chamber |
Henry Ho, Shulin Wang, Binh Tran, Alexander Tam, Errol Antonio C. Sanchez +2 more |
2003-06-24 |
$19,441,000 |
| 6566183 |
Method of making a transistor, in particular spacers of the transistor |
Steven Chen, Kegang Huang, Tzy-Tzan Fu, Kuan-Ting Lin, Hung-Chuan Chen |
2003-05-20 |
|
| 6559039 |
Doped silicon deposition process in resistively heated single wafer chamber |
Shulin Wang, Steven Chen, Errol Antonio C. Sanchez, Xianzhi Tao, Zoran Dragojlovic +1 more |
2003-05-06 |
$19,934,000 |
| 6559074 |
Method of forming a silicon nitride layer on a substrate |
Steven Chen, Xianzhi Tao, Shulin Wang, Kegang Huang, Sang-Hoon Ahn |
2003-05-06 |
$19,934,000 |
| 6500357 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
Claes Bjorkman, Brian Sy-Yuan Shieh, Gerald Yin |
2002-12-31 |
$23,154,000 |
| 6392290 |
Vertical structure for semiconductor wafer-level chip scale packages |
Y. Mohammed Kasem, Yueh-Se Ho, Chang-Sheng Chen, Eddy Tjhia, Bosco Lan +2 more |
2002-05-21 |
$10,574,000 |
| 6270859 |
Plasma treatment of titanium nitride formed by chemical vapor deposition |
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Alex Schreiber +4 more |
2001-08-07 |
$53,916,000 |
| 6210485 |
Chemical vapor deposition vaporizer |
Jun Zhao, Xiaoliang Jin, Frank Chang, Charles Dornfest, Po Tang |
2001-04-03 |
$76,837,000 |
| 6189482 |
High temperature, high flow rate chemical vapor deposition apparatus and related methods |
Jun Zhao, Xiao Liang Jin, Jia-Xiang Wang, Talex Sajoto, Stefan Wolff +2 more |
2001-02-20 |
$78,613,000 |
| 6129044 |
Apparatus for substrate processing with improved throughput and yield |
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Alex Schreiber +4 more |
2000-10-10 |
$151,729,000 |
| 6077562 |
Method for depositing barium strontium titanate |
Charles Dornfest, Jun Zhao, Talex Sajoto |
2000-06-20 |
$109,669,000 |
