| 12080570 |
Semiconductor processing system |
Heng Tao |
2024-09-03 |
|
| 11189496 |
Plasma reactor for ultra-high aspect ratio etching and etching method thereof |
Yichuan Zhang, Jie Liang, Xingcai Su, Tuqiang Ni |
2021-11-30 |
|
| 9947562 |
Method and apparatus for processing semiconductor work pieces |
Aihua Chen, Ryoji Todaka |
2018-04-17 |
$32,881,000 |
| 9230781 |
Capacitive-coupled plasma processing apparatus and method for processing substrate |
Zhongdu Liu |
2016-01-05 |
|
| 9208998 |
Multi-station decoupled reactive ion etch chamber |
Tuqiang Ni, Jinyuan Chen, Xueyu Qian |
2015-12-08 |
|
| 8366829 |
Multi-station decoupled reactive ion etch chamber |
Tuqiang Ni, Jinyuan Chen, Xueyu Qian |
2013-02-05 |
|
| 8336488 |
Multi-station plasma reactor with multiple plasma regions |
Aihua Chen, Yijun Liu, Jinyuan Chen, Lee Luo, Tuqiang Ni +1 more |
2012-12-25 |
|
| 8297225 |
Capacitive CVD reactor and methods for plasma CVD process |
Jinyuan Chen, Tuqiang Ni |
2012-10-30 |
|
| 7658800 |
Gas distribution assembly for use in a semiconductor work piece processing reactor |
Aihua Chen, Shulin Wang, Henry Ho, Qing Lv, Li Fu |
2010-02-09 |
|
| 7503996 |
Multiple frequency plasma chamber, switchable RF system, and processes using same |
Jinyuan Chen, Xueyu Qian, Tuqiang Ni, Hiroshi Iizuka |
2009-03-17 |
|
| 7227244 |
Integrated low k dielectrics and etch stops |
Claes Bjorkman, Melissa Yu, Hongquing Shan, David Cheung, Wai-Fan Yau +7 more |
2007-06-05 |
$16,579,000 |
| 7030335 |
Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
Daniel J. Hoffman, Yan Ye, Dan Katz, Douglas A. Buchberger, Jr., Xiaoye Zhao +3 more |
2006-04-18 |
$27,657,000 |
| 6949203 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
Chang-Lin Hsieh, Diana Xiaobing Ma, Brian Sy-Yuan Shieh, Jennifer Y. Sun, Senh Thach +2 more |
2005-09-27 |
$49,865,000 |
| 6858153 |
Integrated low K dielectrics and etch stops |
Claes Bjorkman, Min Melissa Yu, Hongquing Shan, David Cheung, Wai-Fan Yau +7 more |
2005-02-22 |
$18,056,000 |
| 6849193 |
Highly selective process for etching oxide over nitride using hexafluorobutadiene |
Hoiman Hung, Joseph P. Caulfield, Hongqing Shan, Ruiping Wang |
2005-02-01 |
|
| 6838635 |
Plasma reactor with overhead RF electrode tuned to the plasma |
Daniel J. Hoffman |
2005-01-04 |
|
| 6793835 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
Lee Luo, Claes Bjorkman, Brian Sy-Yuan Shieh |
2004-09-21 |
|
| 6699399 |
Self-cleaning etch process |
Xue-Yu Qian, Zhi-Wen Sun, Weinan Jiang, Arthur Y. Chen, Ming-Hsun Yang +5 more |
2004-03-02 |
$27,245,000 |
| 6669858 |
Integrated low k dielectrics and etch stops |
Claes Bjorkman, Min Melissa Yu, Hongquing Shan, David Cheung, Wai-Fan Yau +7 more |
2003-12-30 |
$36,918,000 |
| 6613691 |
Highly selective oxide etch process using hexafluorobutadiene |
Raymond Hung, Joseph P. Caulfield, Hongching Shan, Ruiping Wang |
2003-09-02 |
$29,625,000 |
| 6602434 |
Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window |
Hoiman Hung, Joseph P. Caulfield, Hongqing Shan, Ruiping Wang |
2003-08-05 |
$36,159,000 |
| 6528751 |
Plasma reactor with overhead RF electrode tuned to the plasma |
Daniel J. Hoffman |
2003-03-04 |
$29,443,000 |
| 6518195 |
Plasma reactor using inductive RF coupling, and processes |
Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, Peter Keswick +7 more |
2003-02-11 |
$17,783,000 |
| 6503367 |
Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
Peter Loewenhardt, Philip M. Salzman |
2003-01-07 |
$25,673,000 |
| 6500357 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
Lee Luo, Claes Bjorkman, Brian Sy-Yuan Shieh |
2002-12-31 |
$23,154,000 |
