Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7901976 | Method of forming borderless contacts | Sriram Viswanathan, Vinay Krishna, Daniel Amzen | 2011-03-08 |
| 7112834 | Gate etch process | Benjamin Schwarz, Chan-Lon Yang, Kiyoko Ikeuchi, Lien Lee | 2006-09-26 |
| 6699795 | Gate etch process | Benjamin Schwarz, Chan-Lon Yang, Kiyoko Ikeuchi, Lien Lee | 2004-03-02 |
| 6545420 | Plasma reactor using inductive RF coupling, and processes | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +6 more | 2003-04-08 |
| 6518195 | Plasma reactor using inductive RF coupling, and processes | Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel +7 more | 2003-02-11 |
| 6488807 | Magnetic confinement in a plasma reactor having an RF bias electrode | Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel +7 more | 2002-12-03 |
| 6444137 | Method for processing substrates using gaseous silicon scavenger | Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel | 2002-09-03 |
| 6440866 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more | 2002-08-27 |
| 6399514 | High temperature silicon surface providing high selectivity in an oxide etch process | Jeffrey Marks, Jerry Wong, David W. Groechel, Chan-Lon Yang | 2002-06-04 |
| 6251792 | Plasma etch processes | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +7 more | 2001-06-26 |
| 6218312 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more | 2001-04-17 |
| 6194325 | Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography | Chan-Lon Yang, Jeffrey Marks, Nicolas Bright, Kenneth S. Collins, David W. Groechel | 2001-02-27 |
| 6171974 | High selectivity oxide etch process for integrated circuit structures | Jeffrey Marks, Jerry Wong, David W. Groechel, Chan-Lon Yang | 2001-01-09 |
| 6068784 | Process used in an RF coupled plasma reactor | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +6 more | 2000-05-30 |
| 6036877 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more | 2000-03-14 |
| 6024826 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more | 2000-02-15 |
| 5990017 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more | 1999-11-23 |
| 5888414 | Plasma reactor and processes using RF inductive coupling and scavenger temperature control | Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel | 1999-03-30 |
| 5556501 | Silicon scavenger in an inductively coupled RF plasma reactor | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +7 more | 1996-09-17 |
| 5423945 | Selectivity for etching an oxide over a nitride | Jeffrey Marks, Kenneth S. Collins, Chan-Lon Yang, David W. Groechel | 1995-06-13 |
| 5399237 | Etching titanium nitride using carbon-fluoride and carbon-oxide gas | Jeffrey Marks | 1995-03-21 |
| 5158644 | Reactor chamber self-cleaning process | David Cheung, Jerry Wong | 1992-10-27 |