| 7901976 |
Method of forming borderless contacts |
Sriram Viswanathan, Vinay Krishna, Daniel Amzen |
2011-03-08 |
$7,227,000 |
| 7112834 |
Gate etch process |
Benjamin Schwarz, Chan-Lon Yang, Kiyoko Ikeuchi, Lien Lee |
2006-09-26 |
$3,938,000 |
| 6699795 |
Gate etch process |
Benjamin Schwarz, Chan-Lon Yang, Kiyoko Ikeuchi, Lien Lee |
2004-03-02 |
$7,941,000 |
| 6545420 |
Plasma reactor using inductive RF coupling, and processes |
Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +6 more |
2003-04-08 |
$28,870,000 |
| 6518195 |
Plasma reactor using inductive RF coupling, and processes |
Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel +7 more |
2003-02-11 |
$17,783,000 |
| 6488807 |
Magnetic confinement in a plasma reactor having an RF bias electrode |
Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel +7 more |
2002-12-03 |
$24,582,000 |
| 6444137 |
Method for processing substrates using gaseous silicon scavenger |
Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel |
2002-09-03 |
$21,151,000 |
| 6440866 |
Plasma reactor with heated source of a polymer-hardening precursor material |
Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more |
2002-08-27 |
$37,805,000 |
| 6399514 |
High temperature silicon surface providing high selectivity in an oxide etch process |
Jeffrey Marks, Jerry Wong, David W. Groechel, Chan-Lon Yang |
2002-06-04 |
$34,666,000 |
| 6251792 |
Plasma etch processes |
Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +7 more |
2001-06-26 |
$57,772,000 |
| 6218312 |
Plasma reactor with heated source of a polymer-hardening precursor material |
Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more |
2001-04-17 |
$52,708,000 |
| 6194325 |
Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography |
Chan-Lon Yang, Jeffrey Marks, Nicolas Bright, Kenneth S. Collins, David W. Groechel |
2001-02-27 |
$52,416,000 |
| 6171974 |
High selectivity oxide etch process for integrated circuit structures |
Jeffrey Marks, Jerry Wong, David W. Groechel, Chan-Lon Yang |
2001-01-09 |
$65,370,000 |
| 6068784 |
Process used in an RF coupled plasma reactor |
Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +6 more |
2000-05-30 |
$186,360,000 |
| 6036877 |
Plasma reactor with heated source of a polymer-hardening precursor material |
Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more |
2000-03-14 |
$75,471,000 |
| 6024826 |
Plasma reactor with heated source of a polymer-hardening precursor material |
Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more |
2000-02-15 |
$233,627,000 |
| 5990017 |
Plasma reactor with heated source of a polymer-hardening precursor material |
Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more |
1999-11-23 |
$60,350,000 |
| 5888414 |
Plasma reactor and processes using RF inductive coupling and scavenger temperature control |
Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel |
1999-03-30 |
$162,060,000 |
| 5556501 |
Silicon scavenger in an inductively coupled RF plasma reactor |
Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +7 more |
1996-09-17 |
$16,373,000 |
| 5423945 |
Selectivity for etching an oxide over a nitride |
Jeffrey Marks, Kenneth S. Collins, Chan-Lon Yang, David W. Groechel |
1995-06-13 |
$35,697,000 |
| 5399237 |
Etching titanium nitride using carbon-fluoride and carbon-oxide gas |
Jeffrey Marks |
1995-03-21 |
$17,444,000 |
| 5158644 |
Reactor chamber self-cleaning process |
David Cheung, Jerry Wong |
1992-10-27 |
$15,641,000 |
