PK

Peter Keswick

Applied Materials: 19 patents #694 of 7,310Top 10%
Cypress Semiconductor: 3 patents #568 of 1,852Top 35%
Overall (All Time): #197,864 of 4,157,543Top 5%
22
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
7901976 Method of forming borderless contacts Sriram Viswanathan, Vinay Krishna, Daniel Amzen 2011-03-08
7112834 Gate etch process Benjamin Schwarz, Chan-Lon Yang, Kiyoko Ikeuchi, Lien Lee 2006-09-26
6699795 Gate etch process Benjamin Schwarz, Chan-Lon Yang, Kiyoko Ikeuchi, Lien Lee 2004-03-02
6545420 Plasma reactor using inductive RF coupling, and processes Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +6 more 2003-04-08
6518195 Plasma reactor using inductive RF coupling, and processes Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel +7 more 2003-02-11
6488807 Magnetic confinement in a plasma reactor having an RF bias electrode Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel +7 more 2002-12-03
6444137 Method for processing substrates using gaseous silicon scavenger Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel 2002-09-03
6440866 Plasma reactor with heated source of a polymer-hardening precursor material Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more 2002-08-27
6399514 High temperature silicon surface providing high selectivity in an oxide etch process Jeffrey Marks, Jerry Wong, David W. Groechel, Chan-Lon Yang 2002-06-04
6251792 Plasma etch processes Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +7 more 2001-06-26
6218312 Plasma reactor with heated source of a polymer-hardening precursor material Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more 2001-04-17
6194325 Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography Chan-Lon Yang, Jeffrey Marks, Nicolas Bright, Kenneth S. Collins, David W. Groechel 2001-02-27
6171974 High selectivity oxide etch process for integrated circuit structures Jeffrey Marks, Jerry Wong, David W. Groechel, Chan-Lon Yang 2001-01-09
6068784 Process used in an RF coupled plasma reactor Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +6 more 2000-05-30
6036877 Plasma reactor with heated source of a polymer-hardening precursor material Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more 2000-03-14
6024826 Plasma reactor with heated source of a polymer-hardening precursor material Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more 2000-02-15
5990017 Plasma reactor with heated source of a polymer-hardening precursor material Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more 1999-11-23
5888414 Plasma reactor and processes using RF inductive coupling and scavenger temperature control Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Jeffrey Marks, David W. Groechel 1999-03-30
5556501 Silicon scavenger in an inductively coupled RF plasma reactor Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +7 more 1996-09-17
5423945 Selectivity for etching an oxide over a nitride Jeffrey Marks, Kenneth S. Collins, Chan-Lon Yang, David W. Groechel 1995-06-13
5399237 Etching titanium nitride using carbon-fluoride and carbon-oxide gas Jeffrey Marks 1995-03-21
5158644 Reactor chamber self-cleaning process David Cheung, Jerry Wong 1992-10-27