Issued Patents All Time
Showing 25 most recent of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6545420 | Plasma reactor using inductive RF coupling, and processes | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jeffrey Marks +6 more | 2003-04-08 |
| 6518195 | Plasma reactor using inductive RF coupling, and processes | Kenneth S. Collins, Chan-Lon Yang, Jeffrey Marks, Peter Keswick, David W. Groechel +7 more | 2003-02-11 |
| 6488807 | Magnetic confinement in a plasma reactor having an RF bias electrode | Kenneth S. Collins, Chan-Lon Yang, Jeffrey Marks, Peter Keswick, David W. Groechel +7 more | 2002-12-03 |
| 6444137 | Method for processing substrates using gaseous silicon scavenger | Kenneth S. Collins, Chan-Lon Yang, Jeffrey Marks, Peter Keswick, David W. Groechel | 2002-09-03 |
| 6399514 | High temperature silicon surface providing high selectivity in an oxide etch process | Jeffrey Marks, David W. Groechel, Peter Keswick, Chan-Lon Yang | 2002-06-04 |
| 6352937 | Method for stripping organic based film | Shingo Kadomura, Masato Toshima | 2002-03-05 |
| 6251792 | Plasma etch processes | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jeffrey Marks +7 more | 2001-06-26 |
| 6171974 | High selectivity oxide etch process for integrated circuit structures | Jeffrey Marks, David W. Groechel, Peter Keswick, Chan-Lon Yang | 2001-01-09 |
| 6068784 | Process used in an RF coupled plasma reactor | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jeffrey Marks +6 more | 2000-05-30 |
| 6024826 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more | 2000-02-15 |
| 6020270 | Bomine and iodine etch process for silicon and silicides | David N. Wang, Mei Chang, Alfred Mak, Dan Maydan | 2000-02-01 |
| 5990017 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more | 1999-11-23 |
| 5895549 | Method and apparatus for etching film layers on large substrates | Haruhiro Harry Goto, Junichi Fujimoto | 1999-04-20 |
| 5888414 | Plasma reactor and processes using RF inductive coupling and scavenger temperature control | Kenneth S. Collins, Chan-Lon Yang, Jeffrey Marks, Peter Keswick, David W. Groechel | 1999-03-30 |
| 5874362 | Bromine and iodine etch process for silicon and silicides | David N. Wang, Mei Chang, Alfred Mak, Dan Maydan | 1999-02-23 |
| 5753133 | Method and apparatus for etching film layers on large substrates | Masato Toshima, Kam S. Law, Dan Maydan, Norman L. Turner | 1998-05-19 |
| 5585729 | Fluid concentration detecting apparatus | Masato Toshima, Hiroji Hanawa | 1996-12-17 |
| 5556501 | Silicon scavenger in an inductively coupled RF plasma reactor | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jeffrey Marks +7 more | 1996-09-17 |
| 5308417 | Uniformity for magnetically enhanced plasma chambers | David W. Groechel, Masato Toshima, Robert Steger, Tetsuya Ishikawa, Regga Tekeste +2 more | 1994-05-03 |
| 5288645 | Hydrogen evolution analyzer | Masato Toshima | 1994-02-22 |
| 5215619 | Magnetic field-enhanced plasma etch reactor | David Cheng, Dan Maydan, Sasson Somekh, Kenneth R. Stalder, Dana L. Andrews +4 more | 1993-06-01 |
| 5176790 | Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal | Paul Arleo, Jon Henri, Graham W. Hills, Robert Wu | 1993-01-05 |
| 5158644 | Reactor chamber self-cleaning process | David Cheung, Peter Keswick | 1992-10-27 |
| 5129958 | Cleaning method for semiconductor wafer processing apparatus | Makoto Nagashima, Naoaki Kobayashi | 1992-07-14 |
| 4960488 | Reactor chamber self-cleaning process | Kam S. Law, Cissy Leung, Ching Chiang Tang, Kenneth S. Collins, Mei Chang +1 more | 1990-10-02 |