| 7992518 |
Silicon carbide gas distribution plate and RF electrode for plasma etch chamber |
Tuqiang Ni |
2011-08-09 |
|
| 6800213 |
Precision dielectric etch using hexafluorobutadiene |
Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang +1 more |
2004-10-05 |
|
| 6776873 |
Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
Jennifer Y. Sun, Shun Wu, Senh Thach, Ananda H. Kumar, Hong Wang +2 more |
2004-08-17 |
|
| 6513452 |
Adjusting DC bias voltage in plasma chamber |
Hongching Shan, Evans Lee, Michael Welch, Bryan Pu, Paul Luscher +2 more |
2003-02-04 |
$18,252,000 |
| 6454898 |
Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
Kenneth S. Collins, Michael R. Rice, Douglas A. Buchberger, Jr., Craig A. Roderick, Eric Askarinam +5 more |
2002-09-24 |
$13,765,000 |
| 6432318 |
Dielectric etch process reducing striations and maintaining critical dimensions |
Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang +1 more |
2002-08-13 |
$22,156,000 |
| 6379574 |
Integrated post-etch treatment for a dielectric etch process |
Hui Ou-Yang, Chih-Ping Yang, Lin-Xiu Ye, Chih-Pang Chen, You-Neng Cheng +2 more |
2002-04-30 |
$26,677,000 |
| 6361705 |
Plasma process for selectively etching oxide using fluoropropane or fluoropropylene |
Ruiping Wang, Gerald Yin, Hao Lu, Jian Ding |
2002-03-26 |
$33,068,000 |
| 6308654 |
Inductively coupled parallel-plate plasma reactor with a conical dome |
Gerhard Schneider, Viktor Shel, Andrew Nguyen, Gerald Yin |
2001-10-30 |
$79,129,000 |
| 6221782 |
Adjusting DC bias voltage in plasma chamber |
Hongching Shan, Evans Lee, Michael Welch, Bryan Pu, Paul Luscher +2 more |
2001-04-24 |
$56,824,000 |
| 6183655 |
Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon |
Ruiping Wang, Gerald Yin, Jian Ding |
2001-02-06 |
$70,544,000 |
| 6074512 |
Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
Kenneth S. Collins, Michael R. Rice, Douglas A. Buchberger, Jr., Craig A. Roderick, Eric Askarinam +5 more |
2000-06-13 |
$124,024,000 |
| 6074959 |
Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide |
Ruiping Wang, Gerald Yin, Jian Ding |
2000-06-13 |
$124,024,000 |
| 6009830 |
Independent gas feeds in a plasma reactor |
Haojiang Li |
2000-01-04 |
$125,197,000 |
| 5986875 |
Puncture resistant electrostatic chuck |
Arik Donde, Hyman J. Levinstein, Andreas Hegedus, Edwin C. Weldon, Shamouil Shamouilian +2 more |
1999-11-16 |
$69,047,000 |
| 5965463 |
Silane etching process |
Chunshi Cui, Gerald Yin |
1999-10-12 |
$64,159,000 |
| 5910221 |
Bonded silicon carbide parts in a plasma reactor |
— |
1999-06-08 |
$70,049,000 |
| 5904778 |
Silicon carbide composite article particularly useful for plasma reactors |
Hao Lu, Nianci Han, Gerald Yin |
1999-05-18 |
$64,674,000 |
| 5891350 |
Adjusting DC bias voltage in plasma chambers |
Hong Ching Shan, Evans Lee, Michael Welch, Bryan Pu, Paul Luscher +2 more |
1999-04-06 |
$106,761,000 |
| 5865937 |
Broad-band adjustable power ratio phase-inverting plasma reactor |
Hongching Shan, Hiroji Hanawa, Michael Welch |
1999-02-02 |
$58,566,000 |
| 5729423 |
Puncture resistant electrostatic chuck |
Arik Donde, Hyman J. Levinstein, Andreas Hegedus, Edwin C. Weldon, Shamouil Shamouilian +2 more |
1998-03-17 |
$79,338,000 |
| 5607542 |
Inductively enhanced reactive ion etching |
Gerald Yin |
1997-03-04 |
$23,013,000 |
| 5605637 |
Adjustable dc bias control in a plasma reactor |
Hongching Shan, Evans Lee |
1997-02-25 |
$55,158,000 |
| 5585012 |
Self-cleaning polymer-free top electrode for parallel electrode etch operation |
Hyman J. Levinstein, Hongching Shan |
1996-12-17 |
$28,233,000 |
| 5560780 |
Protective coating for dielectric material on wafer support used in integrated circuit processing apparatus and method of forming same |
Jian Ding |
1996-10-01 |
$64,906,000 |
