Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11145504 | Method of forming film stacks with reduced defects | Zhijun Jiang, Ganesh Balasubramanian, Arkajit Roy Barman, Xinhai Han, Deenesh Padhi +8 more | 2021-10-12 |
| 10755903 | RPS defect reduction by cyclic clean induced RPS cooling | Sidharth Bhatia, Zhili Zuo, Anjana M. Patel, Song-Moon Suh, Ganesh Balasubramanian | 2020-08-25 |
| 9431477 | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) | Olga Kryliouk, Yuriy Melnik, Tetsuya Ishikawa | 2016-08-30 |
| 8980002 | Methods for improved growth of group III nitride semiconductor compounds | Yuriy Melnik, Lu Chen | 2015-03-17 |
| 8853086 | Methods for pretreatment of group III-nitride depositions | Yuriy Melnik, Lu Chen | 2014-10-07 |
| 8778783 | Methods for improved growth of group III nitride buffer layers | Yuriy Melnik, Lu Chen | 2014-07-15 |
| 8507304 | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) | Olga Kryliouk, Yuriy Melnik, Tetsuya Ishikawa | 2013-08-13 |
| 8138069 | Substrate pretreatment for subsequent high temperature group III depositions | Yuriy Melnik, Olga Kryliouk, Tetsuya Ishikawa | 2012-03-20 |
| 6800213 | Precision dielectric etch using hexafluorobutadiene | Ji Ding, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang, Robert Wu +1 more | 2004-10-05 |
| 6432318 | Dielectric etch process reducing striations and maintaining critical dimensions | Ji Ding, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang, Robert Wu +1 more | 2002-08-13 |