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USPTO Patent Rankings Data through Dec 31, 2025
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Hidehiro Kojiri — 10 Patents

Applied Materials: 9 patents #1,438 of 7,310Top 20%
Sunnyvale, CA: #2,821 of 14,302 inventorsTop 20%
California: #61,378 of 386,348 inventorsTop 20%
Overall (All Time): #481,000 of 4,157,543Top 15%
10 Patents All Time
Hidehiro Kojiri has been granted 10 US patents while listed as an inventor at Applied Materials. The first was granted in 2002 and the most recent in October 2021. Hidehiro Kojiri ranks #481,000 of 4,157,543 US inventors in our database (top 11.6%). Patent records list Hidehiro Kojiri in Sunnyvale, CA, US.

Patents per Year

Patents granted per year, 2002 to 2021Bar chart with a peak of 2 patents in 2014.peak 22002: 1 patents20022004: 1 patents20042012: 1 patents20122013: 1 patents20132014: 2 patents20142015: 1 patents20152016: 1 patents20162020: 1 patents20202021: 1 patents2021

Issued Patents All Time

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
11145504 Method of forming film stacks with reduced defects Zhijun Jiang, Ganesh Balasubramanian, Arkajit Roy Barman, Xinhai Han, Deenesh Padhi +8 more 2021-10-12 $163,741,000
10755903 RPS defect reduction by cyclic clean induced RPS cooling Sidharth Bhatia, Zhili Zuo, Anjana M. Patel, Song-Moon Suh, Ganesh Balasubramanian 2020-08-25 $29,525,000
9431477 Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) Olga Kryliouk, Yuriy Melnik, Tetsuya Ishikawa 2016-08-30 $23,980,000
8980002 Methods for improved growth of group III nitride semiconductor compounds Yuriy Melnik, Lu Chen 2015-03-17 $8,353,000
8853086 Methods for pretreatment of group III-nitride depositions Yuriy Melnik, Lu Chen 2014-10-07 $14,828,000
8778783 Methods for improved growth of group III nitride buffer layers Yuriy Melnik, Lu Chen 2014-07-15 $20,143,000
8507304 Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) Olga Kryliouk, Yuriy Melnik, Tetsuya Ishikawa 2013-08-13 $15,679,000
8138069 Substrate pretreatment for subsequent high temperature group III depositions Yuriy Melnik, Olga Kryliouk, Tetsuya Ishikawa 2012-03-20 $11,903,000
6800213 Precision dielectric etch using hexafluorobutadiene Ji Ding, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang, Robert Wu +1 more 2004-10-05
6432318 Dielectric etch process reducing striations and maintaining critical dimensions Ji Ding, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang, Robert Wu +1 more 2002-08-13 $22,156,000