Issued Patents All Time
Showing 25 most recent of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9932670 | Method of decontamination of process chamber after in-situ chamber clean | Jie Su, Lori D. Washington, Sandeep Nijhawan, Jacob Grayson, Sang Won Kang +2 more | 2018-04-03 |
| 9570651 | Coalesced nanowire structures with interstitial voids and method for manufacturing the same | Patrik Svensson, Linda Romano, Sungsoo Yi, Ying-Lan Chang | 2017-02-14 |
| 9444007 | Nanopyramid sized opto-electronic structure and method for manufacturing of same | Nathan Gardner, Giuliano Portilho Vescovi | 2016-09-13 |
| 9431477 | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) | Yuriy Melnik, Hidehiro Kojiri, Tetsuya Ishikawa | 2016-08-30 |
| 9196795 | Formation of group III-V material layers on patterned substrates | Jie Su, Tuoh Bin Ng, Sang Won Kang, Jie Cui | 2015-11-24 |
| 9035278 | Coalesced nanowire structures with interstitial voids and method for manufacturing the same | Patrik Svensson, Linda Romano, Sungsoo Yi, Ying-Lan Chang | 2015-05-19 |
| 8946674 | Group III-nitrides on Si substrates using a nanostructured interlayer | Hyun Jong Park, Timothy J. Anderson | 2015-02-03 |
| 8921141 | Nanopyramid sized opto-electronic structure and method for manufacturing of same | Nathan Gardner, Giuliano Portilho Vescovi | 2014-12-30 |
| 8765501 | Formation of group III-V material layers on patterned substrates | Jie Su, Tuoh Bin Ng, Sang Won Kang, Jie Cui | 2014-07-01 |
| 8716049 | Growth of group III-V material layers by spatially confined epitaxy | Jie Su | 2014-05-06 |
| 8568529 | HVPE chamber hardware | Tetsuya Ishikawa, David H. Quach, Anzhong Chang, Yuriy Melnik, Harsukhdeep Singh Ratia +2 more | 2013-10-29 |
| 8507304 | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) | Yuriy Melnik, Hidehiro Kojiri, Tetsuya Ishikawa | 2013-08-13 |
| 8491720 | HVPE precursor source hardware | Tetsuya Ishikawa, David H. Quach, Anzhong Chang, Yuriy Melnik, Harsukhdeep Singh Ratia +2 more | 2013-07-23 |
| 8268646 | Group III-nitrides on SI substrates using a nanostructured interlayer | Hyun Jong Park, Timothy J. Anderson | 2012-09-18 |
| D664172 | Dome assembly for a deposition chamber | Tetsuya Ishikawa, David H. Quach, Anzhong Chang, Yuriy Melnik, Harsukhdeep Singh Ratia +2 more | 2012-07-24 |
| 8222057 | Crack free multilayered devices, methods of manufacture thereof and articles comprising the same | Timothy J. Anderson | 2012-07-17 |
| 8183132 | Methods for fabricating group III nitride structures with a cluster tool | Sandeep Nijhawan, Brian H. Burrows, Tetsuya Ishikawa, Anand Vasudev, Jie Su +6 more | 2012-05-22 |
| 8148241 | Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films | Jie Su | 2012-04-03 |
| 8138069 | Substrate pretreatment for subsequent high temperature group III depositions | Yuriy Melnik, Hidehiro Kojiri, Tetsuya Ishikawa | 2012-03-20 |
| 8110889 | MOCVD single chamber split process for LED manufacturing | — | 2012-02-07 |
| 8080466 | Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system | Jie Su, Yuriy Melnik | 2011-12-20 |
| 7001791 | GaN growth on Si using ZnO buffer layer | Tim Anderson, Kee-Chan Kim | 2006-02-21 |
| 6967355 | Group III-nitride on Si using epitaxial BP buffer layer | Tim Anderson, Omar J. Bchir, Kee-Chan Kim | 2005-11-22 |
| 6906351 | Group III-nitride growth on Si substrate using oxynitride interlayer | Timothy J. Anderson, Michael A. Mastro | 2005-06-14 |
| 6350666 | Method and apparatus for producing group-III nitrides | — | 2002-02-26 |