Issued Patents All Time
Showing 25 most recent of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527685 | Emitting devices, associated display screen and methods for fabricating an emitting device | Sylvia Scaringella, Ivan-Christophe Robin, Abdelhay Aboulaich | 2022-12-13 |
| 9570651 | Coalesced nanowire structures with interstitial voids and method for manufacturing the same | Patrik Svensson, Linda Romano, Sungsoo Yi, Olga Kryliouk | 2017-02-14 |
| 9357946 | Breath condensate sampler and detector and breath/breath condensate sampler and detector | Bradley N. Johnson, Kanchan A. Joshi, Ray Radtkey | 2016-06-07 |
| 9291613 | Sensor having a thin-film inhibition layer | Craig W. Bryant, Jean-Christophe P. Gabriel, Bradley N. Johnson, Oleksandr Kuzmych, William Mickelson +3 more | 2016-03-22 |
| 9103775 | Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices | Keith Bradley, Jean-Christophe P. Gabriel, John Loren Passmore, Sergei Skarupo, Eugene Tu +1 more | 2015-08-11 |
| 9035278 | Coalesced nanowire structures with interstitial voids and method for manufacturing the same | Patrik Svensson, Linda Romano, Sungsoo Yi, Olga Kryliouk | 2015-05-19 |
| 8993346 | Magnetic carbon nanotube based biodetection | Ray Radtkey, Kanchan A. Joshi, Bradley N. Johnson | 2015-03-31 |
| 8754454 | Sensor having a thin-film inhibition layer | Craig W. Bryant, Jean-Christophe P. Gabriel, Bradley N. Johnson, Oleksandr Kuzmych, William Mickelson +3 more | 2014-06-17 |
| 8152991 | Ammonia nanosensors, and environmental control system | Mikhail Briman, Craig W. Bryant, Jean-Christophe P. Gabriel, Shirpal C. Gandhi, Bradley N. Johnson +6 more | 2012-04-10 |
| 8154093 | Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices | Keith Bradley, Jean-Christophe P. Gabriel, John Loren Passmore, Sergei Skarupo, Eugene Tu +1 more | 2012-04-10 |
| 7948041 | Sensor having a thin-film inhibition layer | Craig W. Bryant, Jean-Christophe P. Gabriel, Bradley N. Johnson, Oleksandr Kuzmych, William Mickelson +3 more | 2011-05-24 |
| 7553730 | Methods of fabrication employing nanoscale mandrels | Phillip W. Barth, Thomas Edward Kopley, Nicolas J. Moll | 2009-06-30 |
| 7269196 | Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof | Ashish Tandon, Michael Renne Ty Tan | 2007-09-11 |
| 7256394 | Target support and method | Dan Yang, Jennifer Lu, Timothy Joyce | 2007-08-14 |
| 7123638 | Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant | Michael Leary, Danny E. Mars, Sungwon Roh, Danielle Chamberlin | 2006-10-17 |
| 7033938 | Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region | David P. Bour, Tetsuya Takeuchi, Ashish Tandon, Michael Renne Ty Tan, Scott W. Corzine | 2006-04-25 |
| 7034331 | Material systems for semiconductor tunnel-junction structures | Ashish Tandon, Michael Leary, Michael Renne Ty Tan | 2006-04-25 |
| 7016392 | GaAs-based long-wavelength laser incorporating tunnel junction structure | Ashish Tandon, Michael Leary | 2006-03-21 |
| 6931044 | Method and apparatus for improving temperature performance for GaAsSb/GaAs devices | David P. Bour, Michael Renne Ty Tan | 2005-08-16 |
| 6878959 | Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice | David P. Bour, Tetsuya Takeuchi, Danny E. Mars | 2005-04-12 |
| 6878970 | Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells | David P. Bour, Michael Leary, Yoon-Kyu Song, Michael Renne Ty Tan, Tetsuya Takeuchi +1 more | 2005-04-12 |
| 6876686 | Method of fabricating active layers in a laser utilizing InP-based active regions | Ashish Tandon | 2005-04-05 |
| 6813295 | Asymmetric InGaAsN vertical cavity surface emitting lasers | Tetsuya Takeuchi, David P. Bour, Michael Leary, Michael Renne Ty Tan | 2004-11-02 |
| 6764926 | Method for obtaining high quality InGaAsN semiconductor devices | Tetsuya Takeuchi, David P. Bour, Michael Leary, Michael Renne Ty Tan, Andy Luan | 2004-07-20 |
| 6756325 | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region | David P. Bour, Tetsuya Takeuchi, Ashish Tandon, Michael Renne Ty Tan, Scott W. Corzine | 2004-06-29 |