Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7553730 | Methods of fabrication employing nanoscale mandrels | Phillip W. Barth, Thomas Edward Kopley, Ying-Lan Chang | 2009-06-30 |
| 7087941 | lll-phosphide light emitting devices with thin active layers | Nathan Gardner, Fred A. Kish, Jr., Herman C. Chui, Stephen A. Stockman, Michael R. Krames +3 more | 2006-08-08 |
| 7052618 | Nanostructures and methods of making the same | Daniel Roitman, Jennifer Lu | 2006-05-30 |
| 6992337 | Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability | Sandeep R. Bahl | 2006-01-31 |
| 6949008 | System and method for planarizing a substrate surface having a non-planar surface topography | John Stephen Kofol, David Dutton | 2005-09-27 |
| 6822274 | Heterojunction semiconductor device having an intermediate layer for providing an improved junction | Sung Yi, Dave P. Bour, Hans G. Rohdin | 2004-11-23 |
| 6768141 | Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure | Sandeep R. Bahl, Mark R. Hueschen | 2004-07-27 |
| 6762480 | Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain | Colombo Bolognesi | 2004-07-13 |
| 6696710 | Heterojunction bipolar transistor (HBT) having an improved emitter-base junction | Yu-Min Houng | 2004-02-24 |
| 6258639 | Sintered gate schottky barrier fet passivated by a degradation-stop layer | Hans G. Rohdin, Chung-Yi Su, Arlene Sachiyo Wakita-Oyama | 2001-07-10 |
| 5497012 | Unipolar band minima devices | — | 1996-03-05 |
| 5436469 | Band minima transistor | — | 1995-07-25 |
| 5055891 | Heterostructure transistor using real-space electron transfer | Mark R. Hueschen, Marek E. Mierzwinski | 1991-10-08 |