Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9698323 | Frame based package for flip-chip LED | Marc Andre De Samber, Oleg Borisovich Shchekin, Norbertus Antonius Maria Sweegers, Ashim Shatil Haque, Yourii Martynov | 2017-07-04 |
| 8026117 | Semiconductor light emitting device with lateral current injection in the light emitting region | James C. Kim | 2011-09-27 |
| 7719018 | Light emitting devices with compact active regions | Mira S. Misra, Yu-Chen Shen | 2010-05-18 |
| 7535031 | Semiconductor light emitting device with lateral current injection in the light emitting region | James C. Kim | 2009-05-19 |
| 7345324 | Light emitting diodes with graded composition active regions | David P. Bour, Nathan Gardner, Werner Goetz, Tetsuya Takeuchi, Ghulam Hasnain +2 more | 2008-03-18 |
| 7115908 | III-nitride light emitting device with reduced polarization fields | Satoshi Watanabe | 2006-10-03 |
| 7087941 | lll-phosphide light emitting devices with thin active layers | Nathan Gardner, Fred A. Kish, Jr., Herman C. Chui, Michael R. Krames, Gloria Hofler +3 more | 2006-08-08 |
| 6955933 | Light emitting diodes with graded composition active regions | David P. Bour, Nathan Gardner, Werner Goetz, Tetsuya Takeuchi, Ghulam Hasnain +2 more | 2005-10-18 |
| 6956247 | Semiconductor light emitting device including photonic band gap material and luminescent material | — | 2005-10-18 |
| 6946309 | III-Phosphide and III-Arsenide flip chip light-emitting devices | Michael D. Camras, Daniel A. Steigerwald, Frank M. Steranka, Michael J. Ludowise, Paul Scott Martin +2 more | 2005-09-20 |
| 6943381 | III-nitride light-emitting devices with improved high-current efficiency | Nathan Gardner, Christopher Kocot | 2005-09-13 |
| 6900474 | Light emitting devices with compact active regions | Mira S. Misra, Yu-Chen Shen | 2005-05-31 |
| 6835957 | III-nitride light emitting device with p-type active layer | — | 2004-12-28 |
| 6794731 | Minority carrier semiconductor devices with improved reliability | Daniel A. Steigerwald, Changhua Chen | 2004-09-21 |
| 6784463 | III-Phospide and III-Arsenide flip chip light-emitting devices | Michael D. Camras, Daniel A. Steigerwald, Frank M. Steranka, Michael J. Ludowise, Paul Scott Martin +2 more | 2004-08-31 |
| 6635904 | Indium gallium nitride smoothing structures for III-nitride devices | Werner Goetz, Michael D. Camras, Nathan Gardner, R. Scott Kern, Andrew Y. Kim | 2003-10-21 |
| 6630692 | III-Nitride light emitting devices with low driving voltage | Werner Goetz, Nathan Gardner, Richard Scott Kern, Andrew Y. Kim, Anneli Munkholm +2 more | 2003-10-07 |
| 6537838 | Forming semiconductor structures including activated acceptors in buried p-type III-V layers | — | 2003-03-25 |
| 6504171 | Chirped multi-well active region LED | Patrick N. Grillot, Christopher Kocot, Michael R. Krames, Eugene Chen, Ying-Lan Chang +1 more | 2003-01-07 |
| 6489636 | Indium gallium nitride smoothing structures for III-nitride devices | Werner Goetz, Michael D. Camras, Nathan Gardner, R. Scott Kern, Andrew Y. Kim | 2002-12-03 |
| 6469314 | Thin multi-well active layer LED with controlled oxygen doping | Patrick N. Grillot, Eugene Chen, Jen-Wu Huang | 2002-10-22 |
| 6015719 | Transparent substrate light emitting diodes with directed light output | Fred A. Kish, Jr. | 2000-01-18 |
| 5909051 | Minority carrier semiconductor devices with improved stability | Daniel A. Steigerwald, Changhua Chen | 1999-06-01 |
| 5793062 | Transparent substrate light emitting diodes with directed light output | Fred A. Kish, Jr. | 1998-08-11 |
| 5656538 | Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices | Nathan Gardner, Quesnell Hartmann, Gregory E. Stillman | 1997-08-12 |