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Nathan Gardner

UI University Of Illinois: 1 patents #1,166 of 3,009Top 40%
📍 Sunnyvale, CA: #2,304 of 14,302 inventorsTop 20%
🗺 California: #50,852 of 386,348 inventorsTop 15%
Overall (All Time): #413,425 of 4,157,543Top 10%
12
Patents All Time

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
10586891 Light emitting device with improved extraction efficiency Werner Goetz, Michael Jason Grundmann, Melvin McLaurin, John E. Epler, Michael D. Camras +1 more 2020-03-10
10217901 Light emitting device with improved extraction efficiency Werner Goetz, Michael Jason Grundmann, Melvin McLaurin, John E. Epler, Michael D. Camras +1 more 2019-02-26
10056531 Method of processing a semiconductor structure Jerome Chandra Bhat, Daniel A. Steigerwald, Michael D. Camras, Han Ho Choi, Oleg Borisovich Shchekin 2018-08-21
7345324 Light emitting diodes with graded composition active regions David P. Bour, Werner Goetz, Stephen A. Stockman, Tetsuya Takeuchi, Ghulam Hasnain +2 more 2008-03-18
6955933 Light emitting diodes with graded composition active regions David P. Bour, Werner Goetz, Stephen A. Stockman, Tetsuya Takeuchi, Ghulam Hasnain +2 more 2005-10-18
6943381 III-nitride light-emitting devices with improved high-current efficiency Christopher Kocot, Stephen A. Stockman 2005-09-13
6847057 Semiconductor light emitting devices Jonathan J. Wierer, Jr., Gerd O. Mueller, Michael R. Krames 2005-01-25
6822991 Light emitting devices including tunnel junctions William David Collins, III, Arto Nurmikko 2004-11-23
6635904 Indium gallium nitride smoothing structures for III-nitride devices Werner Goetz, Michael D. Camras, R. Scott Kern, Andrew Y. Kim, Stephen A. Stockman 2003-10-21
6630692 III-Nitride light emitting devices with low driving voltage Werner Goetz, Richard Scott Kern, Andrew Y. Kim, Anneli Munkholm, Stephen A. Stockman +2 more 2003-10-07
6489636 Indium gallium nitride smoothing structures for III-nitride devices Werner Goetz, Michael D. Camras, R. Scott Kern, Andrew Y. Kim, Stephen A. Stockman 2002-12-03
5656538 Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices Stephen A. Stockman, Quesnell Hartmann, Gregory E. Stillman 1997-08-12