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Methods for high growth rate deposition for forming different cells on a wafer |
Lori D. Washington, Gregg Higashi, Gang He |
2022-07-19 |
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| 10923626 |
LED sidewall processing to mitigate non-radiative recombination |
Dmitry S. Sizov, Daniel Arthur Haeger, Xiaobin Xin |
2021-02-16 |
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| 10734542 |
Light emitting diode with displaced P-type doping |
Dmitry S. Sizov |
2020-08-04 |
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| 10714655 |
LED structures for reduced non-radiative sidewall recombination |
Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet +1 more |
2020-07-14 |
$127,404,000 |
| 10490691 |
Light emitting diode with displaced P-type doping |
Dmitry S. Sizov |
2019-11-26 |
$106,937,000 |
| 10446712 |
LED structures for reduced non-radiative sidewall recombination |
Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet +1 more |
2019-10-15 |
$104,842,000 |
| 10418519 |
LED sidewall processing to mitigate non-radiative recombination |
Dmitry S. Sizov, Daniel Arthur Haeger, Xiaobin Xin |
2019-09-17 |
$100,781,000 |
| 10319829 |
Method and system for in-situ etch and regrowth in gallium nitride based devices |
Thomas R. Prunty, Hui Nie, Madhan Raj |
2019-06-11 |
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| 10193013 |
LED structures for reduced non-radiative sidewall recombination |
Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet +1 more |
2019-01-29 |
$91,346,000 |
| 10103288 |
Transfer chamber metrology for improved device yield |
Alain Duboust, Alexey Goder |
2018-10-16 |
$21,789,000 |
| 9865772 |
LED structures for reduced non-radiative sidewall recombination |
Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet +1 more |
2018-01-09 |
$85,605,000 |
| 9834860 |
Method of high growth rate deposition for group III/V materials |
Lori D. Washington, Gregg Higashi, Gang He |
2017-12-05 |
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| 9601659 |
LED structures for reduced non-radiative sidewall recombination |
Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet +1 more |
2017-03-21 |
$48,833,000 |
| 9502544 |
Method and system for planar regrowth in GaN electronic devices |
Isik C. Kizilyalli, Linda Romano |
2016-11-22 |
|
| 9484492 |
LED structures for reduced non-radiative sidewall recombination |
Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet |
2016-11-01 |
$71,768,000 |
| 9450112 |
GaN-based Schottky barrier diode with algan surface layer |
Richard J. Brown, Thomas R. Prunty, Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards +2 more |
2016-09-20 |
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| 9397186 |
Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back |
Madhan Raj, Brian Alvarez, Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli |
2016-07-19 |
|
| 9368582 |
High power gallium nitride electronics using miscut substrates |
Isik C. Kizilyalli, Thomas R. Prunty, Gangfeng Ye |
2016-06-14 |
|
| 9330918 |
Edge termination by ion implantation in gallium nitride |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, Richard J. Brown +1 more |
2016-05-03 |
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Method and system for a GaN vertical JFET utilizing a regrown channel |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, Richard J. Brown +1 more |
2016-04-26 |
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| 9318331 |
Method and system for diffusion and implantation in gallium nitride based devices |
Richard J. Brown, Isik C. Kizilyalli, Thomas R. Prunty, Linda Romano, Andrew P. Edwards +2 more |
2016-04-19 |
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| 9287389 |
Method and system for doping control in gallium nitride based devices |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, Richard J. Brown +1 more |
2016-03-15 |
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| 9269793 |
Method and system for a gallium nitride self-aligned vertical MESFET |
Richard J. Brown, Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards |
2016-02-23 |
|
| 9224828 |
Method and system for floating guard rings in gallium nitride materials |
Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, Richard J. Brown, Linda Romano +1 more |
2015-12-29 |
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| 9196679 |
Schottky diode with buried layer in GaN materials |
Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, Richard J. Brown, Linda Romano +1 more |
2015-11-24 |
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