Issued Patents All Time
Showing 25 most recent of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10854727 | High power gallium nitride electronics using miscut substrates | Isik C. Kizilyalli, Dave P. Bour, Gangfeng Ye | 2020-12-01 |
| 10566439 | High power gallium nitride electronics using miscut substrates | Isik C. Kizilyalli, Dave P. Bour, Gangfeng Ye | 2020-02-18 |
| 10347736 | High power gallium nitride electronics using miscut substrates | Isik C. Kizilyalli, Dave P. Bour, Gangfeng Ye | 2019-07-09 |
| 10319829 | Method and system for in-situ etch and regrowth in gallium nitride based devices | David P. Bour, Hui Nie, Madhan Raj | 2019-06-11 |
| 9525039 | Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer | Isik C. Kizilyalli, Dave P. Bour, Hui Nie, Quentin Diduck, Ozgur Aktas | 2016-12-20 |
| 9472684 | Lateral GaN JFET with vertical drift region | Hui Nie, Andrew P. Edwards, Isik C. Kizilyalli, Dave P. Bour | 2016-10-18 |
| 9450112 | GaN-based Schottky barrier diode with algan surface layer | Richard J. Brown, David P. Bour, Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards +2 more | 2016-09-20 |
| 9368582 | High power gallium nitride electronics using miscut substrates | Isik C. Kizilyalli, David P. Bour, Gangfeng Ye | 2016-06-14 |
| 9330918 | Edge termination by ion implantation in gallium nitride | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2016-05-03 |
| 9324844 | Method and system for a GaN vertical JFET utilizing a regrown channel | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2016-04-26 |
| 9318331 | Method and system for diffusion and implantation in gallium nitride based devices | David P. Bour, Richard J. Brown, Isik C. Kizilyalli, Linda Romano, Andrew P. Edwards +2 more | 2016-04-19 |
| 9287389 | Method and system for doping control in gallium nitride based devices | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2016-03-15 |
| 9224828 | Method and system for floating guard rings in gallium nitride materials | Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, Richard J. Brown, David P. Bour +1 more | 2015-12-29 |
| 9196679 | Schottky diode with buried layer in GaN materials | Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, Richard J. Brown, David P. Bour +1 more | 2015-11-24 |
| 9184305 | Method and system for a GAN vertical JFET utilizing a regrown gate | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2015-11-10 |
| 9171937 | Monolithically integrated vertical JFET and Schottky diode | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2015-10-27 |
| 9171923 | Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode | Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, Linda Romano, David P. Bour +1 more | 2015-10-27 |
| 9171751 | Method and system for fabricating floating guard rings in GaN materials | Donald R. Disney, Andrew P. Edwards, Hui Nie, Richard J. Brown, Isik C. Kizilyalli +2 more | 2015-10-27 |
| 9159799 | Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer | Isik C. Kizilyalli, Dave P. Bour, Hui Nie, Quentin Diduck, Ozgur Aktas | 2015-10-13 |
| 9159784 | Aluminum gallium nitride etch stop layer for gallium nitride based devices | Linda Romano, Andrew P. Edwards, Richard J. Brown, David P. Bour, Hui Nie +2 more | 2015-10-13 |
| 9136116 | Method and system for formation of P-N junctions in gallium nitride based electronics | David P. Bour, Linda Romano, Andrew P. Edwards, Isik C. Kizilyalli, Hui Nie +2 more | 2015-09-15 |
| 9123533 | Method and system for in-situ etch and regrowth in gallium nitride based devices | David P. Bour, Hui Nie, Madhan Raj | 2015-09-01 |
| 9093395 | Method and system for local control of defect density in gallium nitride based electronics | David P. Bour, Linda Romano, Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards +1 more | 2015-07-28 |
| 9093284 | Aluminum gallium nitride etch stop layer for gallium nitride based devices | Linda Romano, Andrew P. Edwards, Richard J. Brown, David P. Bour, Hui Nie +2 more | 2015-07-28 |
| 9059199 | Method and system for a gallium nitride vertical transistor | Hui Nie, Andrew P. Edwards, Isik C. Kizilyalli, David P. Bour, Quentin Diduck | 2015-06-16 |