Issued Patents All Time
Showing 25 most recent of 128 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11695088 | Self-bypass diode function for gallium arsenide photovoltaic devices | Hui Nie, Brendan M. Kayes | 2023-07-04 |
| 11211506 | Self-bypass diode function for gallium arsenide photovoltaic devices | Hui Nie, Brendan M. Kayes | 2021-12-28 |
| 11121272 | Self-bypass diode function for gallium arsenide photovoltaic devices | Andrew J. RITENOUR, Brendan M. Kayes, Hui Nie | 2021-09-14 |
| 10916676 | Optoelectronic devices including heterojunction and intermediate layer | Brendan M. Kayes, Hui Nie | 2021-02-09 |
| 10854727 | High power gallium nitride electronics using miscut substrates | Dave P. Bour, Thomas R. Prunty, Gangfeng Ye | 2020-12-01 |
| 10797187 | Photovoltaic device with back side contacts | Gang He, Melissa Archer, Harry A. Atwater, Thomas J. Gmitter, Andreas Hegedus +1 more | 2020-10-06 |
| 10566439 | High power gallium nitride electronics using miscut substrates | Dave P. Bour, Thomas R. Prunty, Gangfeng Ye | 2020-02-18 |
| 10347736 | High power gallium nitride electronics using miscut substrates | Dave P. Bour, Thomas R. Prunty, Gangfeng Ye | 2019-07-09 |
| 9954131 | Optoelectronic devices including heterojunction and intermediate layer | Brendan M. Kayes, Hui Nie | 2018-04-24 |
| 9716196 | Self-bypass diode function for gallium arsenide photovoltaic devices | Hui Nie, Brendan M. Kayes | 2017-07-25 |
| 9691921 | Textured metallic back reflector | Harry A. Atwater, Brendan M. Kayes, Hui Nie | 2017-06-27 |
| 9525039 | Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer | Dave P. Bour, Thomas R. Prunty, Hui Nie, Quentin Diduck, Ozgur Aktas | 2016-12-20 |
| 9508838 | InGaN ohmic source contacts for vertical power devices | Linda Romano, Andrew P. Edwards, Dave P. Bour | 2016-11-29 |
| 9502544 | Method and system for planar regrowth in GaN electronic devices | Linda Romano, David P. Bour | 2016-11-22 |
| 9484470 | Method of fabricating a GaN P-i-N diode using implantation | Hui Nie, Andrew P. Edwards, Richard J. Brown, Donald R. Disney | 2016-11-01 |
| 9472684 | Lateral GaN JFET with vertical drift region | Hui Nie, Andrew P. Edwards, Dave P. Bour, Thomas R. Prunty | 2016-10-18 |
| 9450112 | GaN-based Schottky barrier diode with algan surface layer | Richard J. Brown, Thomas R. Prunty, David P. Bour, Hui Nie, Andrew P. Edwards +2 more | 2016-09-20 |
| 9397186 | Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back | Madhan Raj, Brian Alvarez, David P. Bour, Andrew P. Edwards, Hui Nie | 2016-07-19 |
| 9368582 | High power gallium nitride electronics using miscut substrates | David P. Bour, Thomas R. Prunty, Gangfeng Ye | 2016-06-14 |
| 9330918 | Edge termination by ion implantation in gallium nitride | Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour, Richard J. Brown +1 more | 2016-05-03 |
| 9324844 | Method and system for a GaN vertical JFET utilizing a regrown channel | Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour, Richard J. Brown +1 more | 2016-04-26 |
| 9318619 | Vertical gallium nitride JFET with gate and source electrodes on regrown gate | Donald R. Disney, Hui Nie, Richard J. Brown | 2016-04-19 |
| 9318331 | Method and system for diffusion and implantation in gallium nitride based devices | David P. Bour, Richard J. Brown, Thomas R. Prunty, Linda Romano, Andrew P. Edwards +2 more | 2016-04-19 |
| 9287389 | Method and system for doping control in gallium nitride based devices | Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour, Richard J. Brown +1 more | 2016-03-15 |
| 9269793 | Method and system for a gallium nitride self-aligned vertical MESFET | Richard J. Brown, Hui Nie, Andrew P. Edwards, David P. Bour | 2016-02-23 |