Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
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Dave P. Bour — 10 Patents

AVAvogy: 6 patents #10 of 26Top 40%
NSNexgen Power Systems: 3 patents #7 of 19Top 40%
ATAgilent Technologies: 1 patents #1,723 of 3,411Top 55%
Cupertino, CA: #1,610 of 6,989 inventorsTop 25%
California: #61,378 of 386,348 inventorsTop 20%
Overall (All Time): #481,000 of 4,157,543Top 15%
10 Patents All Time
Dave P. Bour has been granted 10 US patents while listed as an inventor at Avogy. The first was granted in 2004 and the most recent in December 2020. Dave P. Bour ranks #481,000 of 4,157,543 US inventors in our database (top 11.6%). Patent records list Dave P. Bour in Cupertino, CA, US.

Issued Patents All Time

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
10854727 High power gallium nitride electronics using miscut substrates Isik C. Kizilyalli, Thomas R. Prunty, Gangfeng Ye 2020-12-01
10566439 High power gallium nitride electronics using miscut substrates Isik C. Kizilyalli, Thomas R. Prunty, Gangfeng Ye 2020-02-18
10347736 High power gallium nitride electronics using miscut substrates Isik C. Kizilyalli, Thomas R. Prunty, Gangfeng Ye 2019-07-09
9525039 Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer Isik C. Kizilyalli, Thomas R. Prunty, Hui Nie, Quentin Diduck, Ozgur Aktas 2016-12-20
9508838 InGaN ohmic source contacts for vertical power devices Linda Romano, Andrew P. Edwards, Isik C. Kizilyalli 2016-11-29
9472684 Lateral GaN JFET with vertical drift region Hui Nie, Andrew P. Edwards, Isik C. Kizilyalli, Thomas R. Prunty 2016-10-18
9159799 Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer Isik C. Kizilyalli, Thomas R. Prunty, Hui Nie, Quentin Diduck, Ozgur Aktas 2015-10-13
9006800 Ingan ohmic source contacts for vertical power devices Linda Romano, Andrew P. Edwards, Isik C. Kizilyalli 2015-04-14
8823140 GaN vertical bipolar transistor Hui Nie, Andrew P. Edwards, Isik C. Kizilyalli 2014-09-02
6822274 Heterojunction semiconductor device having an intermediate layer for providing an improved junction Sung Yi, Nicolas J. Moll, Hans G. Rohdin 2004-11-23 $4,082,000