Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10854727 | High power gallium nitride electronics using miscut substrates | Isik C. Kizilyalli, Thomas R. Prunty, Gangfeng Ye | 2020-12-01 |
| 10566439 | High power gallium nitride electronics using miscut substrates | Isik C. Kizilyalli, Thomas R. Prunty, Gangfeng Ye | 2020-02-18 |
| 10347736 | High power gallium nitride electronics using miscut substrates | Isik C. Kizilyalli, Thomas R. Prunty, Gangfeng Ye | 2019-07-09 |
| 9525039 | Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer | Isik C. Kizilyalli, Thomas R. Prunty, Hui Nie, Quentin Diduck, Ozgur Aktas | 2016-12-20 |
| 9508838 | InGaN ohmic source contacts for vertical power devices | Linda Romano, Andrew P. Edwards, Isik C. Kizilyalli | 2016-11-29 |
| 9472684 | Lateral GaN JFET with vertical drift region | Hui Nie, Andrew P. Edwards, Isik C. Kizilyalli, Thomas R. Prunty | 2016-10-18 |
| 9159799 | Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer | Isik C. Kizilyalli, Thomas R. Prunty, Hui Nie, Quentin Diduck, Ozgur Aktas | 2015-10-13 |
| 9006800 | Ingan ohmic source contacts for vertical power devices | Linda Romano, Andrew P. Edwards, Isik C. Kizilyalli | 2015-04-14 |
| 8823140 | GaN vertical bipolar transistor | Hui Nie, Andrew P. Edwards, Isik C. Kizilyalli | 2014-09-02 |
| 6822274 | Heterojunction semiconductor device having an intermediate layer for providing an improved junction | Sung Yi, Nicolas J. Moll, Hans G. Rohdin | 2004-11-23 |