Issued Patents All Time
Showing 25 most recent of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12362296 | Systems for fabrication of MMIC and RF devices on engineered substrates | Vladimir Odnoblyudov, Cem Basceri | 2025-07-15 |
| 11881404 | Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources | Vladimir Odnoblyudov, Cem Basceri | 2024-01-23 |
| 11735460 | Integrated circuit devices with an engineered substrate | Vladimir Odnoblyudov, Dilip Risbud, Cem Basceri | 2023-08-22 |
| 11699750 | Gallium nitride epitaxial structures for power devices | Vladimir Odnoblyudov, Steve Lester | 2023-07-11 |
| 11328927 | System for integration of elemental and compound semiconductors on a ceramic substrate | Vladimir Odnoblyudov, Cem Basceri, Shari Farrens | 2022-05-10 |
| 11271101 | RF device integrated on an engineered substrate | Vladimir Odnoblyudov, Cem Basceri | 2022-03-08 |
| 11164743 | Systems and method for integrated devices on an engineered substrate | Vladimir Odnoblyudov, Dilip Risbud, Cem Basceri | 2021-11-02 |
| 11121244 | RF device integrated on an engineered substrate | Vladimir Odnoblyudov, Cem Basceri | 2021-09-14 |
| 11107720 | Methods of manufacturing vertical semiconductor diodes using an engineered substrate | Vladimir Odnoblyudov, Dilip Risbud, Cem Basceri | 2021-08-31 |
| 10930576 | Gallium-nitride based devices implementing an engineered substrate structure | Vladimir Odnoblyudov, Cem Basceri, Shari Farrens | 2021-02-23 |
| 10833186 | Gallium nitride epitaxial structures for power devices | Vladimir Odnoblyudov, Steve Lester | 2020-11-10 |
| 10763110 | Method and system for forming doped regions by diffusion gallium nitride materials | Vladimir Odnoblyudov, Cem Basceri | 2020-09-01 |
| 10755986 | Aluminum nitride based Silicon-on-Insulator substrate structure | Vladimir Odnoblyudov, Dilip Risbud, Cem Basceri | 2020-08-25 |
| 10734486 | Lateral high electron mobility transistor with integrated clamp diode | Vladimir Odnoblyudov | 2020-08-04 |
| 10734303 | Power and RF devices implemented using an engineered substrate structure | Vladimir Odnoblyudov, Cem Basceri, Shari Farrens | 2020-08-04 |
| 10622468 | RF device integrated on an engineered substrate | Vladimir Odnoblyudov, Cem Basceri | 2020-04-14 |
| 10573516 | Methods for integrated devices on an engineered substrate | Vladimir Odnoblyudov, Dilip Risbud, Cem Basceri | 2020-02-25 |
| 10535547 | Methods of forming a vertical semiconductor diode using an engineered substrate | Vladimir Odnoblyudov, Dilip Risbud, Cem Basceri | 2020-01-14 |
| 10529613 | Electronic power devices integrated with an engineered substrate | Vladimir Odnoblyudov, Dilip Risbud, Cem Basceri | 2020-01-07 |
| 10490636 | Lateral high electron mobility transistor with integrated clamp diode | Vladimir Odnoblyudov | 2019-11-26 |
| 10438792 | Methods for integration of elemental and compound semiconductors on a ceramic substrate | Vladimir Odnoblyudov, Cem Basceri, Shari Farrens | 2019-10-08 |
| 10411108 | Vertical gallium nitride Schottky diode | Vladimir Odnoblyudov | 2019-09-10 |
| 10395965 | Electronic power devices integrated with an engineered substrate | Vladimir Odnoblyudov, Dilip Risbud, Cem Basceri | 2019-08-27 |
| 10355120 | Gallium nitride epitaxial structures for power devices | Vladimir Odnoblyudov, Steve Lester | 2019-07-16 |
| 10312378 | Lateral gallium nitride JFET with controlled doping profile | Vladimir Odnoblyudov | 2019-06-04 |