Issued Patents All Time
Showing 1–25 of 119 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10312404 | Semiconductor light emitting device growing active layer on textured surface | Sungsoo Yi, Nathan Gardner, Michael R. Krames | 2019-06-04 |
| 10205054 | III-nitride nanowire LED with strain modified surface active region and method of making thereof | Ping-Chuan Wang | 2019-02-12 |
| 10026866 | III-nitride nanowire LED with strain modified surface active region and method of making thereof | Sungsoo Yi, Patrik Svensson, Nathan Gardner | 2018-07-17 |
| 9911896 | Semiconductor light emitting device growing active layer on textured surface | Sungsoo Yi, Nathan Gardner, Michael R. Krames | 2018-03-06 |
| 9882086 | III-nitride nanowire LED with strain modified surface active region and method of making thereof | Ping-Chuan Wang | 2018-01-30 |
| 9761757 | III-nitride nanowire LED with strain modified surface active region and method of making thereof | Sungsoo Yi, Patrik Svensson, Nathan Gardner | 2017-09-12 |
| 9570651 | Coalesced nanowire structures with interstitial voids and method for manufacturing the same | Patrik Svensson, Sungsoo Yi, Olga Kryliouk, Ying-Lan Chang | 2017-02-14 |
| 9508838 | InGaN ohmic source contacts for vertical power devices | Andrew P. Edwards, Dave P. Bour, Isik C. Kizilyalli | 2016-11-29 |
| 9502544 | Method and system for planar regrowth in GaN electronic devices | Isik C. Kizilyalli, David P. Bour | 2016-11-22 |
| 9450112 | GaN-based Schottky barrier diode with algan surface layer | Richard J. Brown, Thomas R. Prunty, David P. Bour, Isik C. Kizilyalli, Hui Nie +2 more | 2016-09-20 |
| 9412899 | Method of stress induced cleaving of semiconductor devices | Scott Brad Herner, Daniel Bryce Thompson, Martin F. Schubert | 2016-08-09 |
| 9330918 | Edge termination by ion implantation in gallium nitride | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2016-05-03 |
| 9324844 | Method and system for a GaN vertical JFET utilizing a regrown channel | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2016-04-26 |
| 9318331 | Method and system for diffusion and implantation in gallium nitride based devices | David P. Bour, Richard J. Brown, Isik C. Kizilyalli, Thomas R. Prunty, Andrew P. Edwards +2 more | 2016-04-19 |
| 9287468 | LED submount with integrated interconnects | Scott Brad Herner, Daniel Bryce Thompson, Martin F. Schubert | 2016-03-15 |
| 9287389 | Method and system for doping control in gallium nitride based devices | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2016-03-15 |
| 9281442 | III-nitride nanowire LED with strain modified surface active region and method of making thereof | Sungsoo Yi, Patrik Svensson, Nathan Gardner | 2016-03-08 |
| 9224828 | Method and system for floating guard rings in gallium nitride materials | Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, Richard J. Brown, David P. Bour +1 more | 2015-12-29 |
| 9196787 | Nanowire LED structure with decreased leakage and method of making same | Carl Patrik Theodor Svensson, Scott Brad Herner, Cynthia Lemay | 2015-11-24 |
| 9196792 | Nanowire LED structure with decreased leakage and method of making same | Scott Brad Herner, Cynthia Lemay, Carl Patrik Theodor Svensson | 2015-11-24 |
| 9196679 | Schottky diode with buried layer in GaN materials | Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, Richard J. Brown, David P. Bour +1 more | 2015-11-24 |
| 9184305 | Method and system for a GAN vertical JFET utilizing a regrown gate | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2015-11-10 |
| 9171751 | Method and system for fabricating floating guard rings in GaN materials | Donald R. Disney, Andrew P. Edwards, Hui Nie, Richard J. Brown, Isik C. Kizilyalli +2 more | 2015-10-27 |
| 9171937 | Monolithically integrated vertical JFET and Schottky diode | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2015-10-27 |
| 9171923 | Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode | Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, David P. Bour, Richard J. Brown +1 more | 2015-10-27 |