Issued Patents All Time
Showing 26–50 of 119 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9159784 | Aluminum gallium nitride etch stop layer for gallium nitride based devices | Andrew P. Edwards, Richard J. Brown, David P. Bour, Hui Nie, Isik C. Kizilyalli +2 more | 2015-10-13 |
| 9136116 | Method and system for formation of P-N junctions in gallium nitride based electronics | David P. Bour, Thomas R. Prunty, Andrew P. Edwards, Isik C. Kizilyalli, Hui Nie +2 more | 2015-09-15 |
| 9117850 | Method and system for a gallium nitride vertical JFET with self-aligned source and gate | Don Disney, Isik C. Kizilyalli, Hui Nie, Richard J. Brown, Madhan Raj | 2015-08-25 |
| 9117839 | Method and system for planar regrowth in GAN electronic devices | Isik C. Kizilyalli, David P. Bour | 2015-08-25 |
| 9093395 | Method and system for local control of defect density in gallium nitride based electronics | David P. Bour, Thomas R. Prunty, Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards +1 more | 2015-07-28 |
| 9093284 | Aluminum gallium nitride etch stop layer for gallium nitride based devices | Andrew P. Edwards, Richard J. Brown, David P. Bour, Hui Nie, Isik C. Kizilyalli +2 more | 2015-07-28 |
| 9035278 | Coalesced nanowire structures with interstitial voids and method for manufacturing the same | Patrik Svensson, Sungsoo Yi, Olga Kryliouk, Ying-Lan Chang | 2015-05-19 |
| 9006800 | Ingan ohmic source contacts for vertical power devices | Andrew P. Edwards, Dave P. Bour, Isik C. Kizilyalli | 2015-04-14 |
| 8969912 | Method and system for a GaN vertical JFET utilizing a regrown channel | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2015-03-03 |
| 8946788 | Method and system for doping control in gallium nitride based devices | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2015-02-03 |
| 8941117 | Monolithically integrated vertical JFET and Schottky diode | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2015-01-27 |
| 8933532 | Schottky diode with buried layer in GaN materials | Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, Richard J. Brown, David P. Bour +1 more | 2015-01-13 |
| 8927999 | Edge termination by ion implantation in GaN | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2015-01-06 |
| 8853063 | Method and system for carbon doping control in gallium nitride based devices | David P. Bour, Thomas R. Prunty, Richard J. Brown, Isik C. Kizilyalli, Hui Nie | 2014-10-07 |
| 8846482 | Method and system for diffusion and implantation in gallium nitride based devices | David P. Bour, Richard J. Brown, Isik C. Kizilyalli, Thomas R. Prunty, Andrew P. Edwards +2 more | 2014-09-30 |
| 8836071 | Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer | Richard J. Brown, Thomas R. Prunty, David P. Bour, Isik C. Kizilyalli, Hui Nie +2 more | 2014-09-16 |
| 8829574 | Method and system for a GaN vertical JFET with self-aligned source and gate | Donald R. Disney, Isik C. Kizilyalli, Hui Nie, Richard J. Brown, Madhan Raj | 2014-09-09 |
| 8778788 | Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode | Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, David P. Bour, Richard J. Brown +1 more | 2014-07-15 |
| 8749015 | Method and system for fabricating floating guard rings in GaN materials | Donald R. Disney, Andrew P. Edwards, Hui Nie, Richard J. Brown, Isik C. Kizilyalli +2 more | 2014-06-10 |
| 8741707 | Method and system for fabricating edge termination structures in GaN materials | Donald R. Disney, Isik C. Kizilyalli, Andrew P. Edwards, Hui Nie | 2014-06-03 |
| 8643134 | GaN-based Schottky barrier diode with field plate | Madhan Raj, Richard J. Brown, Thomas R. Prunty, David P. Bour, Isik C. Kizilyalli +2 more | 2014-02-04 |
| 8592298 | Fabrication of floating guard rings using selective regrowth | David P. Bour, Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, Richard J. Brown +1 more | 2013-11-26 |
| 8569153 | Method and system for carbon doping control in gallium nitride based devices | David P. Bour, Thomas R. Prunty, Richard J. Brown, Isik C. Kizilyalli, Hui Nie | 2013-10-29 |
| 8558242 | Vertical GaN-based metal insulator semiconductor FET | Richard J. Brown, Hui Nie, Andrew P. Edwards, Isik C. Kizilyalli, David P. Bour +2 more | 2013-10-15 |
| 8502234 | Monolithically integrated vertical JFET and Schottky diode | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2013-08-06 |