Issued Patents All Time
Showing 26–50 of 128 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9224828 | Method and system for floating guard rings in gallium nitride materials | Andrew P. Edwards, Hui Nie, Richard J. Brown, David P. Bour, Linda Romano +1 more | 2015-12-29 |
| 9196679 | Schottky diode with buried layer in GaN materials | Andrew P. Edwards, Hui Nie, Richard J. Brown, David P. Bour, Linda Romano +1 more | 2015-11-24 |
| 9184305 | Method and system for a GAN vertical JFET utilizing a regrown gate | Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour, Richard J. Brown +1 more | 2015-11-10 |
| 9178099 | Methods for forming optoelectronic devices including heterojunction | Hui Nie, Brendan M. Kayes | 2015-11-03 |
| 9171923 | Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode | Andrew P. Edwards, Hui Nie, Linda Romano, David P. Bour, Richard J. Brown +1 more | 2015-10-27 |
| 9171937 | Monolithically integrated vertical JFET and Schottky diode | Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour, Richard J. Brown +1 more | 2015-10-27 |
| 9171900 | Method of fabricating a gallium nitride P-i-N diode using implantation | Hui Nie, Andrew P. Edwards, Richard J. Brown, Donald R. Disney | 2015-10-27 |
| 9171751 | Method and system for fabricating floating guard rings in GaN materials | Donald R. Disney, Andrew P. Edwards, Hui Nie, Richard J. Brown, David P. Bour +2 more | 2015-10-27 |
| 9159799 | Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer | Dave P. Bour, Thomas R. Prunty, Hui Nie, Quentin Diduck, Ozgur Aktas | 2015-10-13 |
| 9159784 | Aluminum gallium nitride etch stop layer for gallium nitride based devices | Linda Romano, Andrew P. Edwards, Richard J. Brown, David P. Bour, Hui Nie +2 more | 2015-10-13 |
| 9136116 | Method and system for formation of P-N junctions in gallium nitride based electronics | David P. Bour, Thomas R. Prunty, Linda Romano, Andrew P. Edwards, Hui Nie +2 more | 2015-09-15 |
| 9136418 | Optoelectronic devices including heterojunction and intermediate layer | Hui Nie, Brendan M. Kayes | 2015-09-15 |
| 9123799 | Gallium nitride field effect transistor with buried field plate protected lateral channel | Ozgur Aktas | 2015-09-01 |
| 9117850 | Method and system for a gallium nitride vertical JFET with self-aligned source and gate | Don Disney, Hui Nie, Linda Romano, Richard J. Brown, Madhan Raj | 2015-08-25 |
| 9117839 | Method and system for planar regrowth in GAN electronic devices | Linda Romano, David P. Bour | 2015-08-25 |
| 9093395 | Method and system for local control of defect density in gallium nitride based electronics | David P. Bour, Linda Romano, Thomas R. Prunty, Hui Nie, Andrew P. Edwards +1 more | 2015-07-28 |
| 9093284 | Aluminum gallium nitride etch stop layer for gallium nitride based devices | Linda Romano, Andrew P. Edwards, Richard J. Brown, David P. Bour, Hui Nie +2 more | 2015-07-28 |
| 9059199 | Method and system for a gallium nitride vertical transistor | Hui Nie, Andrew P. Edwards, David P. Bour, Thomas R. Prunty, Quentin Diduck | 2015-06-16 |
| 9029687 | Photovoltaic device with back side contacts | Melissa Archer, Harry A. Atwater, Thomas J. Gmitter, Gang He, Andreas Hegedus +1 more | 2015-05-12 |
| 9029680 | Integration of a photovoltaic device | Melissa Archer, Harry A. Atwater, Thomas J. Gmitter, Gang He, Andreas Hegedus +1 more | 2015-05-12 |
| 9029210 | GaN vertical superjunction device structures and fabrication methods | Hui Nie, Andrew P. Edwards, Donald R. Disney | 2015-05-12 |
| 9006800 | Ingan ohmic source contacts for vertical power devices | Linda Romano, Andrew P. Edwards, Dave P. Bour | 2015-04-14 |
| 8981432 | Method and system for gallium nitride electronic devices using engineered substrates | Hui Nie, Donald R. Disney | 2015-03-17 |
| 8969994 | Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back | Madhan Raj, Brian Alvarez, David P. Bour, Andrew P. Edwards, Hui Nie | 2015-03-03 |
| 8969912 | Method and system for a GaN vertical JFET utilizing a regrown channel | Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour, Richard J. Brown +1 more | 2015-03-03 |