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Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction |
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LED with internally confined current injection area |
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2021-08-24 |
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LED sidewall processing to mitigate non-radiative recombination |
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2021-02-16 |
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LED with internally confined current injection area |
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2020-03-17 |
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LED structures for reduced non-radiative sidewall recombination |
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2019-10-15 |
| 10418519 |
LED sidewall processing to mitigate non-radiative recombination |
David P. Bour, Dmitry S. Sizov, Xiaobin Xin |
2019-09-17 |
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LED structures for reduced non-radiative sidewall recombination |
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Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction |
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2018-03-13 |
| 9865772 |
LED structures for reduced non-radiative sidewall recombination |
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LED structures for reduced non-radiative sidewall recombination |
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| 9484492 |
LED structures for reduced non-radiative sidewall recombination |
David P. Bour, Kelly McGroddy, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet |
2016-11-01 |
| 9450147 |
LED with internally confined current injection area |
Kelly McGroddy, Hsin-Hua Hu, Andreas Bibl, Clayton Ka Tsun Chan |
2016-09-20 |
| 9077151 |
Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction |
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2015-07-07 |