KK

Kathryn M. Kelchner

Lam Research: 7 patents #410 of 2,128Top 20%
University of California: 4 patents #2,189 of 18,278Top 15%
📍 Lompoc, CA: #228 of 2,245 inventorsTop 15%
🗺 California: #55,401 of 386,348 inventorsTop 15%
Overall (All Time): #446,222 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
11832533 Conformal damage-free encapsulation of chalcogenide materials James S. Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang +4 more 2023-11-28
11552452 Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction Po Shan Hsu, Robert M. Farrell, Daniel Arthur Haeger, Hiroaki Ohta, Anurag Tyagi +3 more 2023-01-10
11239420 Conformal damage-free encapsulation of chalcogenide materials James S. Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang +4 more 2022-02-01
10020188 Method for depositing ALD films using halide-based precursors James S. Sims, Jon Henri, Ramesh Chandrasekharan, Andrew John McKerrow, Seshasayee Varadarajan 2018-07-10
9917422 Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction Po Shan Hsu, Robert M. Farrell, Daniel Arthur Haeger, Hiroaki Ohta, Anurag Tyagi +3 more 2018-03-13
9865455 Nitride film formed by plasma-enhanced and thermal atomic layer deposition process James S. Sims 2018-01-09
9824884 Method for depositing metals free ald silicon nitride films using halide-based precursors James S. Sims, Jon Henri, Ramesh Chandrasekharan, Andrew John McKerrow, Seshasayee Varadarajan 2017-11-21
9611987 White light source employing a III-nitride based laser diode pumping a phosphor James S. Speck, Nathan A. Pfaff, Steven P. DenBaars 2017-04-04
9214333 Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD James S. Sims, Jon Henri, Dennis M. Hausmann 2015-12-15
9076646 Plasma enhanced atomic layer deposition with pulsed plasma exposure James S. Sims, Jon Henri, Sathish Babu S. V. Janjam, Shane Tang 2015-07-07
9077151 Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction Po Shan Hsu, Robert M. Farrell, Daniel Arthur Haeger, Hiroaki Ohta, Anurag Tyagi +3 more 2015-07-07