Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7345323 | Formation of Ohmic contacts in III-nitride light emitting devices | Changhua Chen, Michael D. Camras, Gina L. Christenson, Chihping Kuo, Paul Scott Martin +2 more | 2008-03-18 |
| 6914272 | Formation of Ohmic contacts in III-nitride light emitting devices | Werner Goetz, Michael D. Camras, Changhua Chen, Gina L. Christenson, Chihping Kuo +2 more | 2005-07-05 |
| 6657300 | Formation of ohmic contacts in III-nitride light emitting devices | Werner Goetz, Michael D. Camras, Changhua Chen, Gina L. Christenson, Chihping Kuo +2 more | 2003-12-02 |
| 6635904 | Indium gallium nitride smoothing structures for III-nitride devices | Werner Goetz, Michael D. Camras, Nathan Gardner, Andrew Y. Kim, Stephen A. Stockman | 2003-10-21 |
| 6500257 | Epitaxial material grown laterally within a trench and method for producing same | Shih-Yuan Wang, Changhua Chen, Yong Chen, Scott W. Corzine, Richard P. Schneider | 2002-12-31 |
| 6489636 | Indium gallium nitride smoothing structures for III-nitride devices | Werner Goetz, Michael D. Camras, Nathan Gardner, Andrew Y. Kim, Stephen A. Stockman | 2002-12-03 |
| 6441393 | Semiconductor devices with selectively doped III-V nitride layers | Werner Goetz | 2002-08-27 |
| 6420199 | Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks | Carrie Carter Coman, Fred A. Kish, Jr., Michael R. Krames, Arto Nurmikko, Yoon-Kyu Song | 2002-07-16 |
| 6320206 | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks | Carrie Carter Coman, Fred A. Kish, Jr., Michael R. Krames, Arto Nurmikko, Yoon-Kyu Song | 2001-11-20 |
| 6280523 | Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting | Carrie Carter Coman, Fred A. Kish, Jr., Michael R. Krames, Paul Scott Martin | 2001-08-28 |
| 6274399 | Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices | Changhua Chen, Werner Goetz, Chihping Kuo | 2001-08-14 |
| 6194742 | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices | Changhua Chen, Werner Goetz, Chihping Kuo | 2001-02-27 |
| 6046465 | Buried reflectors for light emitters in epitaxial material and method for producing same | Shih-Yuan Wang, Yong Chen, Scott W. Corzine, Carrie Carter Coman, Michael R. Krames +2 more | 2000-04-04 |