| 10767113 |
Liquid crystal compound containing 2,3,4-trisubstituted benzene and composition thereof |
Guoliang Yun, Hongmei Cui, Mingxia Wang, Sumin Kang, Yongtao Zhang |
2020-09-08 |
| 6849474 |
Growing a low defect gallium nitride based semiconductor |
Shih-Yuan Wang |
2005-02-01 |
| 6500257 |
Epitaxial material grown laterally within a trench and method for producing same |
Shih-Yuan Wang, Changhua Chen, Scott W. Corzine, R. Scott Kern, Richard P. Schneider |
2002-12-31 |
| 6429466 |
Integrated circuit substrate that accommodates lattice mismatch stress |
Scott W. Corzine, Theodore I. Kamins, Michael J. Ludowise, Pierre Mertz, Shih-Yuan Wang |
2002-08-06 |
| 6376269 |
Vertical cavity surface emitting laser (VCSEL) using buried Bragg reflectors and method for producing same |
Shin-Yuan Wang |
2002-04-23 |
| 6327288 |
Buried heterostructure for lasers and light emitting diodes |
Shih-Yuan Wang |
2001-12-04 |
| 6317531 |
Optical cross-connect utilizing metal/hydride mirrors |
Long Yang, Shih-Yuan Wang |
2001-11-13 |
| 6259853 |
Optical element having electrically controllable refractive index |
Scott W. Corzine, Shih-Yuan Wang |
2001-07-10 |
| 6240115 |
Epitaxial facet formation for laser diodes based on III-V material systems |
Shih-Yuan Wang |
2001-05-29 |
| 6211095 |
Method for relieving lattice mismatch stress in semiconductor devices |
Scott W. Corzine, Theodore I. Kamins, Michael J. Ludowise, Pierre Mertz, Shih-Yuan Wang |
2001-04-03 |
| 6177359 |
Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
Shih-Yuan Wang |
2001-01-23 |
| 6100586 |
Low voltage-drop electrical contact for gallium (aluminum, indium) nitride |
Long Yang, Shih-Yuan Wang, Richard P. Schneider |
2000-08-08 |