| 12298551 |
Methods for correcting substrate thickness variation for waveguide applications |
Richard Farrell, Siddharth Buddhiraju, Jilin Yang, Pasqual Rivera, Keith Rozenburg |
2025-05-13 |
| 11195973 |
III-nitride micro-LEDs on semi-polar oriented GaN |
Christopher Pynn |
2021-12-07 |
| 11175447 |
Waveguide in-coupling using polarized light emitting diodes |
Christopher Pynn, Hee Yoon Lee |
2021-11-16 |
| 10923630 |
P—GaN-down micro-LED on semi-polar oriented GaN |
Christopher Pynn, David Hwang |
2021-02-16 |
| 10573781 |
Light emitting diode with tunnel junction |
David Massoubre |
2020-02-25 |
| 9905730 |
Light emitting device with bonded interface |
Patrick N. Grillot, Rafael I. Aldaz, Deborah L. Colbentz, Hanmin Zhao |
2018-02-27 |
| 8816368 |
P-contact layer for a III-P semiconductor light emitting device |
Theodore Chung |
2014-08-26 |
| 8692286 |
Light emitting device with bonded interface |
Patrick N. Grillot, Rafael I. Aldaz, Deborah L. Coblentz, Hanmin Zhao |
2014-04-08 |
| 8017958 |
P-contact layer for a III-P semiconductor light emitting device |
Theodore Chung |
2011-09-13 |
| 7906357 |
P-type layer for a III-nitride light emitting device |
Junko Kobayashi, Werner Goetz |
2011-03-15 |
| 6989555 |
Strain-controlled III-nitride light emitting device |
Werner Goetz, Michael R. Krames |
2006-01-24 |
| 6630692 |
III-Nitride light emitting devices with low driving voltage |
Werner Goetz, Nathan Gardner, Richard Scott Kern, Andrew Y. Kim, Stephen A. Stockman +2 more |
2003-10-07 |
