| 9806111 |
Nanostructure optoelectronic device with independently controllable junctions |
James C. Kim, Sungsoo Yi |
2017-10-31 |
| 8659037 |
Nanostructure optoelectronic device with independently controllable junctions |
James C. Kim, Sungsoo Yi |
2014-02-25 |
| 8476637 |
Nanostructure optoelectronic device having sidewall electrical contact |
James C. Kim, Sungsoo Yi |
2013-07-02 |
| 8431817 |
Multi-junction solar cell having sidewall bi-layer electrical interconnect |
James C. Kim, Sungsoo Yi |
2013-04-30 |
| 7123638 |
Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant |
Michael Leary, Sungwon Roh, Danielle Chamberlin, Ying-Lan Chang |
2006-10-17 |
| 6878959 |
Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice |
David P. Bour, Ying-Lan Chang, Tetsuya Takeuchi |
2005-04-12 |
| 6853663 |
Efficiency GaN-based light emitting devices |
Ghulam Hasnain, Richard P. Schneider, Scott W. Corzine, Mark R. Hueschen, Tetsuya Takeuchi |
2005-02-08 |
| 6756018 |
Method and apparatus for selective execution of microfluidic circuits utilizing electrically addressable gas generators |
Ken Nishimura |
2004-06-29 |
| 6155699 |
Efficient phosphor-conversion led structure |
Jeffrey N. Miller |
2000-12-05 |
| 5805624 |
Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate |
Long Yang |
1998-09-08 |
| 5376229 |
Method of fabrication of adjacent coplanar semiconductor devices |
Jeffrey N. Miller, Steven D. Lester |
1994-12-27 |