Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12376388 | Low resistance photoconductive semiconductor switch (PCSS) | Andrew D. Koehler, Travis J. Anderson, Geoffrey M. Foster, Karl D. Hobart, Francis J. Kub | 2025-07-29 |
| 12243916 | Polarization-engineered heterogeneous semiconductor heterostructures | Karl D. Hobart, Marko J. Tadjer, Mark Goorsky, Asif Khan, Samuel Graham, Jr. | 2025-03-04 |
| 11996840 | Light controlled switch module | Andrew D. Koehler, Travis J. Anderson, Geoffrey M. Foster, Karl D. Hobart, Francis J. Kub | 2024-05-28 |
| 11448824 | Devices with semiconductor hyperbolic metamaterials | — | 2022-09-20 |
| 10494738 | Growth of crystalline materials on two-dimensional inert materials | Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson +2 more | 2019-12-03 |
| 10266963 | Growth of crystalline materials on two-dimensional inert materials | Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson +2 more | 2019-04-23 |
| 9111786 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Francis J. Kub, Travis J. Anderson, Charles R. Eddy, Jr., Jennifer K. Hite | 2015-08-18 |
| 9105499 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Francis J. Kub, Travis J. Anderson, Charles R. Eddy, Jr., Jennifer K. Hite | 2015-08-11 |
| 9018056 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Francis J. Kub, Travis J. Anderson, Charles R. Eddy, Jr., Jennifer K. Hite | 2015-04-28 |
| 8900939 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Francis J. Kub, Travis J. Anderson, Karl D. Hobart, Charles R. Eddy, Jr. | 2014-12-02 |
| 8779456 | Inverted light-emitting diode having plasmonically enhanced emission | — | 2014-07-15 |
| 8653550 | Inverted light emitting diode having plasmonically enhanced emission | — | 2014-02-18 |
| 8648390 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Francis J. Kub, Karl D. Hobart, Charles R. Eddy, Jr., Travis J. Anderson | 2014-02-11 |
| 8445383 | Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices | Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Joshua D. Caldwell, Kendrick X Liu +2 more | 2013-05-21 |
| 8384129 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Francis J. Kub, Karl D. Hobart, Charles R. Eddy, Jr., Travis J. Anderson | 2013-02-26 |
| 8254086 | Two-step synthesis of manganese oxide nanostructures on carbon for supercapacitor applications | Francis J. Kub | 2012-08-28 |
| 8237152 | White light emitting device based on polariton laser | Charles R. Eddy, Jr. | 2012-08-07 |
| 7928471 | Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor | Charles R. Eddy, Jr., Shahzad Akbar | 2011-04-19 |
| 7790230 | Metal chloride seeded growth of electronic and optical materials | Jaime A. Freitas, Charles R. Eddy, Jr., Jihyun Kim | 2010-09-07 |
| 6906351 | Group III-nitride growth on Si substrate using oxynitride interlayer | Olga Kryliouk, Timothy J. Anderson | 2005-06-14 |